LDMOS avionics radar power transistor Rev. March 2009 Objective d

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

LDMOS avionics radar power transistor Rev. March 2009 Objective d

Datasheet Thumbnail

Top Searches for this datasheet

BLA6H0912-500
LDMOS avionics radar power transistor
Rev. March 2009 Objective data sheet
General description
LDMOS power transistor intended avionics transmitter applications 1215 range such Mode-S, TCAS, JTIDS, TACAN.
Table Test information Typical performance Tcase class-AB production test circuit. Mode operation pulsed (MHz) 1200 (dB) (ns) (ns)
CAUTION This device sensitive ElectroStatic Discharge (ESD). Therefore care should taken during transport handling.
Features
Typical pulsed performance frequency 1215 MHz, supply voltage with Output power Power gain Efficiency Easy power control Integrated protection High flexibility with respect pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed broadband operation (960 1215 MHz) Internally matched ease Compliant Directive 2002/95/EC, regarding restriction hazardous substances (RoHS)
Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Applications
L-band power amplifiers radar applications frequency range
Pinning information
Table Pinning Description drain gate source
Simplified outline
Graphic symbol
sym112
Connected flange.
Ordering information
Table Ordering information Package Name BLA6H0912-500 Description flanged ceramic package; mounting holes; leads Version SOT634A Type number
Limiting values
Table Limiting values accordance with Absolute Maximum Rating System (IEC 60134). Symbol Tstg Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions +150 Unit
Thermal characteristics
Table Symbol Zth(j-c) Thermal characteristics Parameter transient thermal impedance from junction case Conditions Tcase <tbd> <tbd> <tbd> <tbd> Unit
BLA6H0912-500_1
B.V. 2009. rights reserved.
Objective data sheet
Rev. March 2009
Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Characteristics
Table characteristics section unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VGS(th) 3.75 Unit
<tbd> <tbd>
drain-source on-state resistance VGS(th) 3.75
Table characteristics Mode operation: pulsed performance Tcase unless otherwise specified, class-AB production test circuit. Symbol RLin Pdroop(pulse) Parameter output power supply voltage power gain input return loss drain efficiency pulse droop power rise time fall time Conditions Unit
Ruggedness class-AB operation
BLA6H0912-500 capable withstanding load mismatch corresponding VSWR through phases under following conditions:
BLA6H0912-500_1
B.V. 2009. rights reserved.
Objective data sheet
Rev. March 2009
Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Application information
Impedance information
Table Typical impedance Typical values section unless otherwise specified. 1030 1060 1090 1215 0.75 j0.94 0.91 j1.08 1.00 j1.13 1.10 j1.18 1.71 j1.20 1.43 j0.95 1.29 j0.95 1.23 j0.96 1.17 j0.99 0.96 j1.16
drain gate
001aaf059
Definition transistor impedance
BLA6H0912-500_1
B.V. 2009. rights reserved.
Objective data sheet
Rev. March 2009
Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Package outline
Flanged ceramic package; mounting holes; leads SOT634A
scale
DIMENSIONS (millimetre dimensions derived from original inch dimensions) UNIT inches 4.83 3.68 0.190 0.145 12.82 12.57 0.505 0.495 0.15 0.08 0.006 0.003 22.58 22.12 0.889 0.871 22.56 22.15 0.888 0.872 1.14 0.89 0.045 0.035 5.33 4.32 0.210 0.170 3.38 3.12 0.133 0.123 1.70 1.45 0.067 0.057 27.94 1.100 34.16 33.91 1.345 1.335 13.84 13.59 0.545 0.535 0.25 0.010 0.51 0.020
13.34 13.34 13.08 13.08 0.525 0.525 0.515 0.515
OUTLINE VERSION SOT634A
REFERENCES JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 01-11-27 03-05-01
Package outline SOT634A
B.V. 2009. rights reserved.
BLA6H0912-500_1
Objective data sheet
Rev. March 2009
Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Abbreviations
Table Acronym JTIDS LDMOS Mode-S TACAN TCAS VSWR Abbreviations Description Distance Measuring Equipment Joint Tactical Information Distribution System Laterally Diffused Metal-Oxide Semiconductor Mode Select Radio Frequency TACtical Navigation Traffic Collision Avoidance System Voltage Standing-Wave Ratio
Revision history
Table Revision history Release date 20090305 Data sheet status Objective data sheet Change notice Supersedes Document BLA6H0912-500_1
BLA6H0912-500_1
B.V. 2009. rights reserved.
Objective data sheet
Rev. March 2009
Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
Product status[3] Development Qualification Production
Definition This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. term `short data sheet' explained section "Definitions". product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com.
11.2 Definitions
Draft document draft version only. content still under internal review subject formal approval, which result modifications additions. Semiconductors does give representations warranties accuracy completeness information included herein shall have liability consequences such information. Short data sheet short data sheet extract from full data sheet with same product type number(s) title. short data sheet intended quick reference only should relied upon contain detailed full information. detailed full information relevant full data sheet, which available request local Semiconductors sales office. case inconsistency conflict with short data sheet, full data sheet shall prevail.
malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights.
11.3 Disclaimers
General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure
11.4 Trademarks
Notice: referenced brands, product names, service names trademarks property their respective owners.
Contact information
more information, please visit: http://www.nxp.com sales office addresses, please send email salesaddresses@nxp.com
BLA6H0912-500_1
B.V. 2009. rights reserved.
Objective data sheet
Rev. March 2009
Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
Contents
11.1 11.2 11.3 11.4 Product profile General description. Features Applications Pinning information Ordering information Limiting values. Thermal characteristics. Characteristics Ruggedness class-AB operation. Application information. Impedance information Package outline Abbreviations Revision history Legal information. Data sheet status Definitions Disclaimers Trademarks Contact information. Contents
Please aware that important notices concerning this document product(s) described herein, have been included section `Legal information'.
B.V. 2009.
rights reserved.
more information, please visit: http://www.nxp.com sales office addresses, please send email salesaddresses@nxp.com Date release: March 2009 Document identifier: BLA6H0912-500_1

LDMOS avionics radar power transistor Rev. March 2009 Objective d

Top Searches for this datasheet

Other recent searches