M09207 Waveguide Assembly High Modulation Depth GaAs Diode Drive

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M09207 Waveguide Assembly High Modulation Depth GaAs Diode Drive

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Band Waveguide Modulator
M09207
Waveguide Assembly High Modulation Depth GaAs Diode Drive Voltage Cost Commercial Applications
Specifications 25°C
Insertion Loss: Typ. Modulation Depth: >90% Typ. Frequency Operation: 24.125 Bandwidth: Modulation Rate: Hz-100 Drive Voltage: Typ.
Description
Microsemi's MO9207 K-band modulator with integral GaAs diode designed testing Doppler transceivers bench field. Various radar cross sections simulated attaching different size horn antennas modulator.
Maximum Ratings
Operating Temperature Storage Temperature Drive Current -30°C +70°C -40°C +85°C
Copyright 2008 Rev: 2008-11-04
Microsemi
Microwave Products
Technology Drive, Lowell, 01851, -442-5600, Fax: 978-937-3748
Page
Band Waveguide Modulator
Band Waveguide Modulator (MO9207)
M09207
MO9207 Band Waveguide Modulator
0.820 (20.83) Max. UG-595/U Flange WR-42 Waveguide Solder
Typical Performance Characteristics
Modulation
0.875 (22.2)
1.30 Max. (33.02)
Peak Diode Current (mA)
0.120 Thru [3.05]
0.875 (22.2)
0.125 Max. (3.18)
Modulation Characteristic
Dimensions inches (mm).
Modulator Driver
modulation driver should current limited pulse current. drive current from 50-ohm modulator operating volts 120-ohm resistor should inserted series with diode.
Flange mates with UG-595/U WR-42. Delivered with grounded buss wire protection.
Positive drive applied solder unit. Ground metallic contact waveguide.
Copyright 2008 Rev: 2008-11-04
Microsemi
Microwave Products
Technology Drive, Lowell, 01851, -442-5600, Fax: 978-937-3748
Page

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