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Denotes RoHS Compliant, free Terminal Finish MICROWAVE DISCRETE P


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MRF581 MRF581G MRF581A MRF581AG
Denotes RoHS Compliant, free Terminal Finish
MICROWAVE DISCRETE POWER TRANSISTORS
Noise Gain Optimum Noise Figure 15.5 Ftau 10v, 75mA Cost Effective MacroX Package
Macro
DESCRIPTION: Designed high current, power, noise, amplifiers GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 MRF581A Unit
Thermal Data
Total Device Dissipation Derate above Total Device Dissipation Derate above Storage Junction Temperature Range +150 Maximum Junction Temperature 1.25 Watts Watts
Tstg TJmax
Revision December 2008
Microsemi reserves right change, without notice, specifications information contained herein
Visit website www.microsemi.com contact factory direct.
MRF581 MRF581G MRF581A MRF581AG
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, Vdc) Emitter Cutoff Current (Vbe Vdc) MRF581 MRF581A Value Min. Typ. Max. Unit
(on)
Current Gain mAdc, Vdc) MRF581 MRF581A
DYNAMIC
Symbol Ftau Test Conditions Output Capacitance (VCB Vdc, MHz) Current-Gain Bandwidth Product mAdc, Vdc, GHz) Value Min. Typ. Max. Unit
Microsemi reserves right change, without notice, specifications information contained herein
Visit website www.microsemi.com contact factory direct.
MRF581 MRF581G MRF581A MRF581AG
FUNCTIONAL
Symbol Test Conditions Noise Figure (50ohms) mAdc, Vdc, GHz) Power Gain NFmin mAdc, Vdc, GHz) Maximum Unilateral Gain mAdc, Vdc, Maximum Stable Gain mAdc, Vdc, Insertion Gain mAdc, Vdc, Value Min. Typ. 15.5 17.8 Max. Unit
|S21|
Table Common Emitter S-Parameters,
(MHz)
1000
|S11|
.610 .659 .671 .675 .677 .678 .677 .679 .678 .682
-137 -161 -171 -178
|S21|
23.8 13.2
|S12|
.026 .033 .040 .047 .055 .064 .073 .082 .092 .102
|S22|
.522 .351 .304 .292 .293 .299 .306 .314 .322 .311
-106 -120 -128 -132 -134 -135 -136 -138 -139
Microsemi reserves right change, without notice, specifications information contained herein
Visit website www.microsemi.com contact factory direct.
MRF581 MRF581G MRF581A MRF581AG
1000 Chip Capacitor Tantalum Capacitor VK-200, Ferroxcube TL1, TL7, Microstrip 0.162, 0.600, Microstrip 0.162, 0.800, Microstrip 0.120, 0.440, TL9, TL10 Microstrip 0.025, 4.250, Board Material 0.0625, Thick Glass Teflon 2.55
1.0-10 Johanson Capacitor Res. Ferrite Bead, Ferroxcube, 56-590-65/3B Microstrip 0.162, 1.000, Microstrip 0.162, 0.440, Microstrip 0.120, 1.160,
Figure Minimum Noise Figure Gain Minimum Noise Figure.
Microsemi reserves right change, without notice, specifications information contained herein
Visit website www.microsemi.com contact factory direct.
MRF581 MRF581G MRF581A MRF581AG
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency (dB) (mA) Ccb(pF) BVCEO (mA)
Pout (watts)
(dB) (mA) (dB)
Freq (MHz)
Device
SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72
MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179
0.15 1.75
11.5 11.5 11.5
12.5 12.5 12.5 12.5
1000
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39
TO-72 TO-72 MACRO MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39
2N5109 MRF5943C 2N5179 2N2857 MRF517
MRF904 2N6304 BFR91 BFR96 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586
1200 1300 1600
11.4 1000
MRF5943,
Ftau (MHz)
4000 1400 5000 5000 1300 4500
(dB)
Package
BVCEO
Device
Type
Packag
Type
4600
16.5 5000 14.5
MACRO MRF559 MACRO MRF559 TO-39 2N3866A SO-8 MRF3866, POWER MACRO MRF555 POWER MACRO MRF555T
12.5 12.5 12.5
12.5 12.5 12.5 12.5
MRF5812,
15.5 17.8 5000
17.8 5000 14.5 4500
MACRO MRF559 MACRO MRF559 SO-8 MRF8372,R1,R2 0.75 POWER MACRO MRF557 POWER MACRO MRF557T
MACRO MACRO MACRO MACRO
MRF951 MRF571 BFR91 BFR90
1000 1000 1000
8000 0.45 8000 5000
1000
12.5 5000
TO-39 TO-39
MRF545 MRF544
1400
13.5 1500
(Low Power General Purpose) Selection Guide
(LNA General Purpose) Selection Guide
Cost Plastic Package Options
Macro
Macro
Power
SO-8
Microsemi reserves right change, without notice, specifications information contained herein
Visit website www.microsemi.com contact factory direct.
MRF581 MRF581G MRF581A MRF581AG
COLLECTOR EMITTER BASE EMITTER
Microsemi reserves right change, without notice, specifications information contained herein
Visit website www.microsemi.com contact factory direct.

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