Qualified MIL-PRF-19500/592 DEVICES LEVELS 2N7227 2N7227U
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N-CHANNEL MOSFET
Qualified MIL-PRF-19500/592 DEVICES LEVELS
2N7227
2N7227U
JANTX JANTXV
ABSOLUTE MAXIMUM RATINGS +25°C unless otherwise noted) Parameters Test Conditions Drain Source Voltage Gate Source Voltage Continuous Drain Current +25°C Continuous Drain Current +100°C Max. Power Dissipation +25°C Drain Source State Resistance Operating Storage Temperature Note: Derated Linearly W/°C +25°C 10Vdc, ELECTRICAL CHARACTERISTICS +25°C, unless otherwise noted) Parameters Test Conditions Drain-Source Breakdown Voltage 1mAdc Gate-Source Voltage (Threshold) VGS, 0.25mA VGS, 0.25mA, +125°C VGS, 0.25mA, -55°C Gate Current ±20V, ±20V, +125°C Drain Current 320V 320V, +125°C Static Drain-Source On-State Resistance 10V, 9.0A pulsed 10V, 14.0A pulsed +125°C 10V, 9.0A pulsed Diode Forward Voltage pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 Min. Max. Unit Symbol Rds(on) Top, Tstg Value 14.0 0.315 +150 Unit
TO-254AA
±100 ±200 0.25 0.315 0.415 0.68
nAdc
U-PKG (U3) TO-276AB
µAdc mAdc
T4-LDS-0050 Rev. (072808)
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N-CHANNEL MOSFET
Qualified MIL-PRF-19500/592 DYNAMIC CHARACTERISTICS Parameters Test Conditions Gate Charge: On-State Gate Charge Gate Source Charge Gate Drain Charge SWITCHING CHARACTERISTICS Parameters Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time 14A, 10Vdc, Gate drive impedance 7.5, 200Vdc di/dt 100A/µs, 30V, Symbol td(on) td(off) Min. Max. 1200 Unit Symbol Qg(on) Min. Max. Unit
10V,
T4-LDS-0050 Rev. (072808)
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