Boost chopper Trench Field Stop IGBT Power Module Application mot

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Boost chopper Trench Field Stop IGBT Power Module Application mot

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APTGT150DA60T3AG
Boost chopper Trench Field Stop IGBT Power Module
Application motor control Switched Mode Power Supplies Power Factor Correction
VCES 600V 150A 100°C
Features Trench Field Stop IGBT Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current RBSOA SCSOA rated Very stray inductance Kelvin emitter easy drive Internal thermistor temperature monitoring High level integration substrate improved thermal performance
Benefits Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile RoHS Compliant
Pins 29/30/31/32 must shorted together Pins 26/27/28/22/23/25 must shorted together achieve phase Pins 16/18/19/20 must shorted together
Absolute maximum ratings
Symbol VCES RBSOA Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area 25°C 100°C 25°C 25°C 150°C ratings 300A 550V Unit
May, 2009 APTGT150DA60T3AG
These Devices sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT150DA60T3AG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 600V 25°C =15V 150A 150°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy Short Circuit data Test Conditions 1MHz VGE= ±15V VCE=300V IC=150A Inductive Switching (25°C) ±15V VBus 300V 150A Inductive Switching (150°C) ±15V VBus 300V 150A ±15V 25°C VBus 300V 150°C 150A 25°C 150°C VBus 360V 150°C 9200 0.85 Unit
Chopper diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy 150A 300V 150A Test Conditions 600V 25°C 150°C
100°C
Unit
May, 2009 APTGT150DA60T3AG
25°C 150°C 25°C 150°C 25°C 150°C 25°C 150°C
15.2
di/dt =2800A/µs
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APTGT150DA60T3AG
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 0.25 0.42 Unit
°C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol R25/R25 B25/85 Characteristic Resistance 25°C 298.15 TC=100°C
Thermistor value
Thermistor temperature
3952
Unit
Package outline (dimensions
application note 1901 Mounting Instructions Power Modules www.microsemi.com
www.microsemi.com
APTGT150DA60T3AG
May, 2009
APTGT150DA60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics
150°C VGE=19V
TJ=25°C
TJ=125°C
TJ=150°C
TJ=25°C
VGE=13V VGE=15V
VGE=9V
Transfert Characteristics
TJ=25°C
Energy losses Collector Current
300V 150°C Eoff
(mJ)
Switching Energy Losses Gate Resistance
300V =15V 150A 150°C TJ=125°C TJ=150°C TJ=25°C
Reverse Bias Safe Operating Area
Eoff Eoff
VGE=15V TJ=150°C RG=3.3
(mJ)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W)
IGBT
0.25 0.15 0.05 Single Pulse 0.0001 0.001 0.01
0.05 0.00001
Rectangular Pulse Duration Seconds
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APTGT150DA60T3AG
May, 2009
APTGT150DA60T3AG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard switching VCE=300V D=50% RG=3.3 TJ=150°C
Forward Characteristic diode
TJ=25°C TJ=125°C TJ=150°C
Tc=85°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W)
Diode
Single Pulse 0.0001 0.001 0.01
0.05 0.00001
Rectangular Pulse Duration Seconds
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT150DA60T3AG
May, 2009

Boost chopper Trench Field Stop IGBT Power Module Application mot

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