Phase Trench Field Stop IGBT Power Module VCES 1200V 150A 100°C
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APTGT150A120T3AG
Phase Trench Field Stop IGBT Power Module
VCES 1200V 150A 100°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features
Trench Field Stop IGBT Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current RBSOA SCSOA rated Very stray inductance Kelvin emitter easy drive Internal thermistor temperature monitoring High level integration substrate improved thermal performance
Benefits Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile RoHS Compliant
Pins 29/30/31/32 must shorted together Pins 26/27/28/22/23/25 must shorted together achieve phase Pins 16/18/19/20 must shorted together
Absolute maximum ratings
Symbol VCES RBSOA Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area 25°C 100°C 25°C 25°C 125°C ratings 1200 300A 1150V Unit
July, 2008 APTGT150A120T3AG
These Devices sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT150A120T3AG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C 150A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions 1MHz VGE= ±15V VCE=600V IC=150A Inductive Switching (25°C) ±15V VBus 600V 150A Inductive Switching (125°C) ±15V VBus 600V 150A ±15V 125°C VBus 600V 150A 125°C VBus 900V 10µs 125°C 10.7 0.56 0.48 Unit
Reverse diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy 150A 600V 150A Test Conditions VR=1200V 25°C 125°C
100°C
1200
Unit
25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C
July, 2008 APTGT150A120T3AG
di/dt =2500A/µs
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APTGT150A120T3AG
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 0.15 0.25 Unit
°C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol R25/R25 B25/85 Characteristic Resistance 25°C 298.15 TC=100°C
Thermistor value
Thermistor temperature
3952
Unit
Package outline (dimensions
application note 1901 Mounting Instructions Power Modules www.microsemi.com
www.microsemi.com
APTGT150A120T3AG
July, 2008
APTGT150A120T3AG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics
TJ=125°C 125°C VGE=17V VGE=13V VGE=15V VGE=9V
TJ=25°C
Transfert Characteristics
Energy losses Collector Current
600V 125°C
TJ=25°C
TJ=125°C
(mJ)
Eoff
TJ=125°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
600V =15V 150A 125°C
Reverse Bias Safe Operating Area
Eoff
1200 1600
VGE=15V TJ=125°C RG=2.2
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.16 Thermal Impedance (°C/W) 0.12
IGBT
0.08
0.04 0.00001 0.05 0.0001 0.001 0.01 Single Pulse
rectangular Pulse Duration (Seconds)
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APTGT150A120T3AG
July, 2008
APTGT150A120T3AG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
VCE=600V D=50% RG=2.2 TJ=125°C TC=75°C
Forward Characteristic diode
TJ=125°C TJ=25°C TJ=125°C
Hard Switching
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.05 0.0001 0.001 Single Pulse 0.01
Diode
0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT150A120T3AG
July, 2008
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