Three level inverter Trench Field Stop IGBT Power Module VCES 600V 100

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Three level inverter Trench Field Stop IGBT Power Module VCES 600V 100

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APTGT100TL60T3G
Three level inverter Trench Field Stop IGBT Power Module VCES 600V 100A 80°C
Application Solar converter Uninterruptible Power Supplies Features Trench Field Stop IGBT Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance High level integration Internal thermistor temperature monitoring
Benefits Stable temperature behavior Very rugged Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant
multiple inputs outputs must shorted together Example: 10/11/12
Absolute maximum ratings
Symbol VCES RBSOA Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area 25°C 80°C 25°C 25°C 150°C ratings 200A 550V Unit
February, 2009 APTGT100TL60T3G
These Devices sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed. application note APT0502 www.microsemi.com
www.microsemi.com
APTGT100TL60T3G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 600V 25°C =15V 100A 150°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy Short Circuit data Junction Case Thermal Resistance Test Conditions 1MHz VGE=±15V, IC=100A VCE=300V Inductive Switching (25°C) ±15V VBus 300V 100A Inductive Switching (150°C) ±15V VBus 300V 100A ±15V 25°C VBus 300V 150°C 100A 25°C 150°C VBus 360V 150°C 6100 0.875 0.44 Unit
°C/W
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APTGT100TL60T3G
February, 2009
APTGT100TL60T3G
diode ratings characteristics
Symbol Characteristic VRRM RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions 25°C 150°C 80°C 25°C 150°C 25°C 150°C 25°C 150°C 25°C 150°C
Unit
Maximum Reverse Leakage Current Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction Case Thermal Resistance
VR=600V
0.85
0.98 °C/W
di/dt =2000A/µs
300V
diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage RthJC Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction Case Thermal Resistance 100A 300V 100A Test Conditions VR=600V 25°C 150°C 80°C 25°C 150°C 25°C 150°C 25°C 150°C 25°C 150°C 0.77 Unit °C/W
di/dt =2000A/µs
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol R25/R25 B25/85 Characteristic Resistance 25°C 298.15 TC=100°C
Thermistor value
Thermistor temperature
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APTGT100TL60T3G
February, 2009
3952
Unit
APTGT100TL60T3G
Thermal package characteristics
Symbol VISOL TSTG Torque Characteristic
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
heatsink
2500
Unit
Package outline (dimensions
application note 1901 Mounting Instructions Power Modules www.microsemi.com
Typical performance curve
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
VCE=300V D=50% G=3.3 50°C =85°C Hard switching
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APTGT100TL60T3G
February, 2009
APTGT100TL60T3G
Output Characteristics (VGE=15V) Output Characteristics
TJ=150°C 150°C VGE=19V
TJ=25°C TJ=125°C
TJ=25°C
VGE=13V VGE=15V
VGE=9V
Transfert Characteristics
TJ=25°C
Energy losses Collector Current (mJ)
300V 150°C Eoff
TJ=125°C TJ=150°C TJ=25°C
Switching Energy Losses Gate Resistance
300V =15V 100A 150°C
Reverse Bias Safe Operating Area
(mJ)
Eoff
Gate Resistance (ohms)
VGE=15V TJ=150°C RG=3.3
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
Rectangular Pulse Duration Seconds
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APTGT100TL60T3G
0.05 0.00001
February, 2009
APTGT100TL60T3G
Typical performance curve
Forward Characteristic diode
TJ=25°C TJ=150°C
Switching Energy Losses Gate Resistance (mJ)
300V 150°C
Energy losses Collector Current
300V 150°C
(mJ)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse
February, 2009 APTGT100TL60T3G
0.05 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration Seconds
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APTGT100TL60T3G
Typical performance curve
Forward Characteristic diode
TJ=150°C
TJ=25°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
300V 100A 150°C
Energy losses Collector Current (mJ)
300V 150°C
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse
February, 2009 APTGT100TL60T3G
0.05 0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration Seconds
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
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Three level inverter Trench Field Stop IGBT Power Module VCES 600V 100

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