Triple Dual Common Source Fast Trench Field Stop IGBT Power Module VCE
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APTGT100TDU120TPG
Triple Dual Common Source Fast Trench Field Stop IGBT Power Module VCES 1200V 100A 80°C
Application Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Trench Field Stop IGBT Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat Very (12mm) profile Each easily paralleled achieve dual common source configuration three times current capability RoHS Compliant
NTC1 NTC2 E1/E2 E3/E4
E5/E6
Absolute maximum ratings
25°C 80°C 25°C 25°C 125°C
May, 2009 APTGT100TDU120TPG
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
ratings 1200 200A 1100V
Unit
These Devices sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT100TDU120TPG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C =15V 100A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 600V 100A Inductive Switching (125°C) ±15V VBus 600V 100A ±15V 125°C VBus 600V 100A 125°C 7200 Unit
Reverse diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy 100A 600V 100A Test Conditions VR=1200V 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C 1200 Unit
May, 2009 APTGT100TDU120TPG
di/dt =2000A/µs
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APTGT100TDU120TPG
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol R25/R25 25/85 Characteristic Resistance 25°C 298.15 TC=100°C
Thermistor temperature Thermistor value
3952
Unit
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 0.26 0.48 Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
SP6-P Package outline (dimensions
places (3:1)
DIMENSIONS MARKED TOLERENCED
application note 1902 Mounting Instructions SP6-P (12mm) Power Modules www.microsemi.com
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APTGT100TDU120TPG
May, 2009
APTGT100TDU120TPG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 125°C
TJ=125°C
TJ=25°C
VGE=17V
VGE=13V VGE=15V
VGE=9V
Transfert Characteristics
TJ=25°C TJ=125°C
(mJ)
Energy losses Collector Current
600V 125°C Eoff
TJ=125°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
600V =15V 100A 125°C
Reverse Bias Safe Operating Area
Eoff
1200 1500
VGE=15V TJ=125°C RG=3.9
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.25 0.15 0.05 0.05 0.0001 0.001 Single Pulse 0.01
IGBT
0.00001
rectangular Pulse Duration (Seconds)
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APTGT100TDU120TPG
May, 2009
APTGT100TDU120TPG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
VCE=600V D=50% RG=3.9 TJ=125°C Tc=75°C
Forward Characteristic diode
TJ=25°C
TJ=125°C
Hard switching
TJ=125°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.05 0.0001 0.001 Single Pulse
Diode
0.00001
0.01
rectangular Pulse Duration (Seconds)
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT100TDU120TPG
May, 2009
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