Asymmetrical Bridge Trench Field Stop IGBT Power Module VCES 600V

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Asymmetrical Bridge Trench Field Stop IGBT Power Module VCES 600V

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APTGT100DH60T3G
Asymmetrical Bridge Trench Field Stop IGBT Power Module
VCES 600V 100A* 80°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench Field Stop IGBT Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current RBSOA SCSOA rated Very stray inductance Symmetrical design Internal thermistor temperature monitoring High level integration Benefits Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile RoHS Compliant
multiple inputs outputs must shorted together Example: 13/14 29/30 22/23
Absolute maximum ratings
Symbol VCES RBSOA Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area 25°C 80°C 25°C 25°C 150°C ratings 200A 550V Unit
April, 2009 APTGT100DH60T3G
Specification IGBT device output current must limited exceed delta temperature greater than 30°C connectors.
These Devices sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT100DH60T3G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy Short Circuit data Test Conditions 600V 25°C =15V 100A 150°C 20V, Test Conditions 1MHz VGE=±15V, IC=100A VCE=300V Inductive Switching (25°C) ±15V VBus 300V 100A Inductive Switching (150°C) ±15V VBus 300V 100A ±15V 25°C VBus 300V 150°C 100A 25°C 150°C VBus 360V 150°C Test Conditions VR=600V 100A 25°C 150°C 80°C 25°C 150°C 25°C 150°C 25°C 150°C 25°C 150°C Unit Unit
Dynamic Characteristics
6100 0.875
Diode ratings characteristics (CR2 CR3)
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy 100A 300V Unit
April, 2009 APTGT100DH60T3G
di/dt =2000A/µs
IGBT protection diodes only
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APTGT100DH60T3G
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 0.44 0.77 Unit
°C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol R25/R25 B25/85 Characteristic Resistance 25°C 298.15 TC=100°C
Thermistor value
Thermistor temperature
3952
Unit
Package outline (dimensions
application note 1901 Mounting Instructions Power Modules www.microsemi.com
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APTGT100DH60T3G
April, 2009
APTGT100DH60T3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics
TJ=150°C 150°C VGE=19V
TJ=25°C TJ=125°C
TJ=25°C
VGE=13V VGE=15V
VGE=9V
Transfert Characteristics
TJ=25°C
Energy losses Collector Current (mJ)
300V 150°C Eoff
TJ=125°C TJ=150°C TJ=25°C
Switching Energy Losses Gate Resistance
300V =15V 100A 150°C
Reverse Bias Safe Operating Area
(mJ)
Eoff
VGE=15V TJ=150°C RG=3.3
Gate Resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
IGBT
0.05 0.00001
Rectangular Pulse Duration Seconds
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APTGT100DH60T3G
April, 2009
APTGT100DH60T3G
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard switching VCE=300V D=50% RG=3.3 TJ=150°C
Forward Characteristic diode
TJ=125°C TJ=150°C
Tc=85°C
TJ=25°C
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
Diode
0.05 0.00001
Rectangular Pulse Duration Seconds
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT100DH60T3G
April, 2009

Asymmetrical Bridge Trench Field Stop IGBT Power Module VCES 600V

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