Boost chopper Fast Trench Field Stop IGBT® Power Module VCES 1200

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Boost chopper Fast Trench Field Stop IGBT® Power Module VCES 1200

Datasheet Thumbnail

Top Searches for this datasheet

APTGT100DA120T1G
Boost chopper Fast Trench Field Stop IGBT® Power Module
VCES 1200V 100A* 80°C
Application motor control Switched Mode Power Supplies Power Factor Correction
Features
Benefits
Fast Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current RBSOA SCSOA rated Very stray inductance Internal thermistor temperature monitoring High level integration
Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile RoHS Compliant
Pins must shorted together
Absolute maximum ratings
Symbol VCES RBSOA Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area 25°C 80°C 25°C 25°C 125°C ratings 1200 200A 1100V Unit
August, 2007 APTGT100DA120T1G
Specification IGBT device output current must limited exceed delta temperature greater than 30°C connectors.
These Devices sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed. application note APT0502 www.microsemi.com
www.microsemi.com
APTGT100DA120T1G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C =15V 100A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 600V 100A Inductive Switching (125°C) ±15V VBus 600V 100A ±15V 125°C VBus 600V 100A 125°C 7200 Unit
Chopper diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy 100A 600V 100A Test Conditions VR=1200V 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C 1200 Unit
August, 2007 APTGT100DA120T1G
di/dt =2000A/µs
www.microsemi.com
APTGT100DA120T1G
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 0.26 0.48 Unit
°C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15
Thermistor temperature Thermistor value
3952
Unit
Package outline (dimensions
application note 1904 Mounting Instructions Power Modules www.microsemi.com
www.microsemi.com
APTGT100DA120T1G
August, 2007
APTGT100DA120T1G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 125°C
TJ=125°C
TJ=25°C
VGE=17V
VGE=13V VGE=15V
VGE=9V
Transfert Characteristics
TJ=25°C TJ=125°C
(mJ)
Energy losses Collector Current
600V 125°C Eoff
TJ=125°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
600V =15V 100A 125°C
Reverse Bias Safe Operating Area
Eoff
1200 1500
VGE=15V TJ=125°C RG=3.9
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.05 0.0001 0.001 Single Pulse 0.01
IGBT
0.15 0.05
0.00001
rectangular Pulse Duration (Seconds)
www.microsemi.com
APTGT100DA120T1G
August, 2007
0.25
APTGT100DA120T1G
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
VCE=600V D=50% RG=3.9 TJ=125°C Tc=75°C
Forward Characteristic diode
TJ=25°C
TJ=125°C
Hard switching
TJ=125°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.05 0.0001 0.001 Single Pulse
Diode
0.00001
0.01
rectangular Pulse Duration (Seconds)
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
www.microsemi.com
APTGT100DA120T1G
August, 2007

Boost chopper Fast Trench Field Stop IGBT® Power Module VCES 1200

Top Searches for this datasheet

Other recent searches