APT50GT120B2RDL(G) Resonant Mode IGBT® Thunderbolt IGBT® use

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APT50GT120B2RDL(G) Resonant Mode IGBT® Thunderbolt IGBT® use

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APT50GT120B2RDL(G) 1200V
APT50GT120B2RDL(G)
Resonant Mode IGBT®
Thunderbolt IGBT® used this Resonant Mode Combi generation high voltage power IGBTs. Using Non- Punch Through Technology, Thunderblot IGBT® offers superior ruggedness ultrafast switching speed.
Features Conduction Loss Gate Charge Ultrafast Tail Current shutoff forward Diode Voltage (VF) Ultrasoft Recovery Diode SSOA Rated RoHS Compliant Typical Applications Induction Heating Welding Medical High Power Telecom Resonant Mode Phase Shifted Bridge
MAXIMUM RATINGS
Symbol VCES SSOA TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
Ratings: 25°C unless otherwise specified.
APT50GT120B2RDL(G) UNIT Volts
1200
25°C
150A 1200V
Watts Amps
Continuous Collector Current 110°C Pulsed Collector Current
150°C
Switching Safe Operating Area 150°C Total Power Dissipation Operating Storage Junction Temperature Range Max. Lead Temp. Soldering: 0.063" from Case Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic Test Conditions Collector-Emitter Breakdown Voltage (VGE 3mA) Gate Threshold Voltage (VCE VGE, 2mA, 25°C) Units
1200
Volts
Collector-Emitter Voltage (VGE 15V, 50A, 25°C) Collector-Emitter Voltage (VGE 15V, 50A, 125°C) Collector Cut-off Current (VCE 1200V, 25°C)
RG(int)
7-2008 052-6350
Collector Cut-off Current (VCE 1200V, 125°C) Gate-Emitter Leakage Current (VGE ±20V) Intergrated Gate Resistor
1500
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Microsemi Website http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP SSOA td(on) td(off) Eon1 Eon2 Eoff td(on) td(off) Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT50GT120B2RDL(G)
Test Conditions Capacitance Gate Charge 600V 150°C,
UNIT
2500
Gate-Emitter Charge Gate-Collector ("Miller Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
15V, 100H, 1200V Inductive Switching (25°C) 800V +25°C
3585 4835 1910 3580 6970 2750
Turn-on Switching Energy (Diode)
Inductive Switching (125°C) 800V +125°C
Turn-on Switching Energy (Diode)
THERMAL MECHANICAL CHARACTERISTICS
Symbol Characteristic Junction Case (IGBT) Junction Case (DIODE) Package Weight UNIT °C/W
Repetitive Rating: Pulse width limited maximum junction temperature. Combi devices, Ices includes both IGBT FRED leakages MIL-STD-750 Method 3471. Eon1 clamped inductive turn-on energy IGBT only, without effect commutating diode reverse recovery current adding IGBT turn-on loss. Tested inductive switching test circuit shown figure with Silicon Carbide diode. Eon2 clamped inductive turn-on energy that includes commutating diode reverse recovery current IGBT turn-on switching loss. (See Figures 22.) Eoff clamped inductive turn-off energy measured accordance with JEDEC standard JESD24-1. (See Figures 23.) external gate resistance, including RG(int) gate driver impedance.
7-2008
Continuous current limited package lead temperature.
Microsemi reserves right change, without notice, specifications information contained herein.
052-6350
APT50GT120B2RDL(G)
COLLECTOR CURRENT VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE Output Characteristics 25°C)
25°C
25°C 55°C
COLLECTOR CURRENT
125°C 150°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE Output Characteristics 25°C) VGE, GATE-TO-EMITTER VOLTAGE
250s PULSE TEST<0.5 DUTY CYCLE
GATE CHARGE (nC) FIGURE Gate charge 960V 240V 600V
COLLECTOR CURRENT
-55°C 25°C 125°C VCE, GATE-TO-EMITTER VOLTAGE FIGURE Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
25°C. 250s PULSE TEST <0.5 DUTY CYCLE
15V. 250s PULSE TEST <0.5 DUTY CYCLE
100A
100A
VGE, GATE-TO-EMITTER VOLTAGE FIGURE State Voltage Gate-to-Emitter Voltage 1.10
Junction Temperature (°C) FIGURE State Voltage Junction Temperature
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 COLLECTOR CURRENT
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JUNCTION TEMPERATURE FIGURE Threshold Voltage Junction Temperature
Case Temperature (°C) FIGURE Collector Current Case Temperature
7-2008
APT50GT120B2RDL(G)
25°C, 125°C ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Delay Time Collector Current RISE TIME (ns) ICE, COLLECTOR EMITTER CURRENT FIGURE Current Rise Time Collector Current 25,000 EON2, TURN ENERGY LOSS
800V +15V
(OFF), TURN-OFF DELAY TIME (ns) 800V ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-Off Delay Time Collector Current FALL TIME (ns)
25°C, 125°C, 100H, 800V =15V,TJ=125°C =15V,TJ=25°C
td(ON), TURN-ON DELAY TIME (ns)
800V
100H
100H
100H, 800V
125°C,VGE
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Fall Time Collector Current 6000 EOFF, TURN ENERGY LOSS 5000 4000 3000 2000
25°C
800V +15V
20,000
125°C
125°C
15,000
10,000
5,000
25°C
1000
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Energy Loss Collector Current 60,000 SWITCHING ENERGY LOSSES 50,000 40,000 30,000 20,000 10,000
Eon2,50A Eoff,50A Eon2,25A Eoff,100A Eoff,25A
800V +15V 125°C
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn Energy Loss Collector Current 25,000 SWITCHING ENERGY LOSSES
800V +15V
Eon2,100A
Eon2,100A
20,000
15,000
10,000
Eon2,50A Eoff,50A Eon2,25A Eoff,25A
7-2008
5,000
Eoff,100A
052-6350
GATE RESISTANCE (OHMS) FIGURE Switching Energy Losses Gate Resistance
JUNCTION TEMPERATURE (°C) FIGURE Switching Energy Losses Junction Temperature
4,000 Cies COLLECTOR CURRENT
APT50GT120B2RDL(G)
CAPACITANCE
1,000
Coes Cres VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure Capacitance Collector-To-Emitter Voltage
1000 1200 1400 VCE, COLLECTOR EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0.20
ZJC, THERMAL IMPEDANCE (°C/W)
0.16
0.12 0.08 0.04 0.05 10-5 10-4 SINGLE PULSE
Note:
Duty Factor 1/t2 Peak
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case Pulse Duration
FMAX, OPERATING FREQUENCY (kHz)
MODEL Junction temp. (°C) 0.0814 Power (watts) 0.0993 Case temperature. (°C) 0.259 0.0151
max, max2) 0.05 max1 d(on) td(off)
125°C 75°C 800V
max2 Pdiss
Pdiss cond
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
COLLECTOR CURRENT Figure Operating Frequency Collector Current
052-6350
7-2008
APT50GT120B2RDL(G)
APT30DL120
Gate Voltage 125°C
td(on)
Collector Current
Collector Voltage
D.U.T.
Switching Energy
Figure Inductive Switching Test Circuit
Figure Turn-on Switching Waveforms Definitions
Gate Voltage td(off) Collector Voltage
125°C
Collector Current
Switching Energy
Figure Turn-off Switching Waveforms Definitions
052-6350
7-2008
APT50GT120B2RDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic Test Conditions Maximum Average Forward Current 110°C, Duty Cycle 0.5) Forward Current (Square wave, duty) Non-Repetitive Forward Surge Current 45°C, 8.3ms)
Ratings: 25°C unless otherwise specified.
APT50GT120B2RDL(G) UNIT Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic Test Conditions Forward Voltage 30A, 125°C UNIT Volts
DYNAMIC CHARACTERISTICS
Symbol IRRM IRRM IRRM Characteristic Test Conditions UNIT Reverse Recovery Time -100A/s, 30V, 25°C Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
ZJC, THERMAL IMPEDANCE (°C/W) 0.05 10-5 10-4 SINGLE PULSE
Note:
2694 5744 6182
30A, diF/dt -200A/s 800V, 25°C
Amps Amps Amps
=30A, diF/dt -200A/s 800V, 125°C
30A, diF/dt -1000A/s 800V, 125°C
Duty Factor 1/t2 Peak
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
(°C)
0.355
Dissipated Power (Watts)
(°C)
0.273
ZEXT external thermal impedances: Case sink, sink ambient, etc. zero when modeling only case junction.
0.002
0.1172
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6350
ZEXT
7-2008
APT50GT120B2RDL(G)
175°C 125°C 25°C -55°C ANODE-TO-CATHODE VOLTAGE Figure Forward Current Forward Voltage 5000 Qrr, REVERSE RECOVERY CHARGE (nC) 4500 4000 3500 3000 2500 2000 1500 1000
125°C 800V
trr, REVERSE RECOVERY TIME (ns)
125°C 800V
FORWARD CURRENT
1000 1200 -diF /dt, CURRENT RATE CHANGE(A/s) Figure Reverse Recovery Time Current Rate Change IRRM, REVERSE RECOVERY CURRENT
125°C 800V
1000 1200 -diF /dt, CURRENT RATE CHANGE (A/s) Figure Reverse Recovery Charge Current Rate Change DYNAMIC PARAMETERS (Normalized 1000A/s)
1000 1200 -diF /dt, CURRENT RATE CHANGE (A/s) Figure Reverse Recovery Current Current Rate Change IF(AV)
Duty cycle 175°C
IRRM
JUNCTION TEMPERATURE (°C) Figure Dynamic Parameters Junction Temperature JUNCTION CAPACITANCE (pF)
Case Temperature (°C) Figure Maximum Average Forward Current CaseTemperature
7-2008
052-6350
REVERSE VOLTAGE Figure Junction Capacitance Reverse Voltage
+18V D.U.T. Adjust
APT10078BLL
APT50GT120B2RDL(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure Diode Test Circuit
Forward Conduction Current Rate Diode Current Change Through Zero Crossing. IRRM Maximum Reverse Recovery Current. Zero
0.25 IRRM
Reverse Recovery Time, measured from zero crossing where diode current goes from positive negative, point which straight line through IRRM 0.25 IRRM passes through zero. Area Under Curve Defined IRRM trr.
Figure Diode Reverse Recovery Waveform Definitions
T-MAX® (B2) Package Outline
SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
(Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) 2-Plcs.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
Gate Collector (Cathode) Emmiter
7-2008 052-6350
(Anode)
Dimensions Millimeters (Inches)
Microsemi's products covered more U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.

APT50GT120B2RDL(G) Resonant Mode IGBT® Thunderbolt IGBT® use

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