ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
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600V APT15DQ60K APT15DQ60KG*
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters -Inverters Snubber Diode
PRODUCT FEATURES
Ultrafast Recovery Times Soft Recovery Characteristics Popular TO-220 Package Forward Voltage Leakage Current Avalanche Energy Rated
PRODUCT BENEFITS
Losses Noise Switching Cooler Operation Higher Reliability Systems Increased System Power Density
Cathode Anode Back Case Cathode
MAXIMUM RATINGS
Symbol VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG Characteristic Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
Ratings: 25°C unless otherwise specified.
APT15DQ60K(G) UNIT
Volts
Maximum Average Forward Current 129°C, Duty Cycle 0.5) Forward Current (Square wave, duty) Non-Repetitive Forward Surge Current 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating StorageTemperature Range Lead Temperature Sec.
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic Test Conditions Forward Voltage 15A, 125°C Maximum Reverse Leakage Current Junction Capacitance, 200V 600V 600V, 125°C UNIT
1.56
Volts
Microsemi Website http://www.microsemi.com
053-4205
11-2008
DYNAMIC CHARACTERISTICS
Symbol IRRM IRRM IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current 15A, diF/dt -1000A/µs 400V, 125°C 15A, diF/dt -200A/µs 400V, 125°C 15A, diF/dt -200A/µs 400V, 25°C Test Conditions diF/dt -100A/µs, 30V, 25°C
APT15DQ60K(G)
UNIT
Amps Amps Amps
THERMAL MECHANICAL CHARACTERISTICS
Symbol Characteristic Test Conditions Junction-to-Case Thermal Resistance UNIT °C/W
1.35 0.07
Package Weight
Torque
Maximum Mounting Torque
Microsemi reserves right change, without notice, specifications information contained herein.
1.40 THERMAL IMPEDANCE (°C/W) 1.20 1.00 0.80 0.60 0.40 0.20
Note:
0.05 10-4 SINGLE PULSE
Duty Factor 1/t2 Peak
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
(°C)
(°C)
0.583 0.767
11-2008
Dissipated Power (Watts) 0.00222 0.0598
053-4205
ZEXT external thermal impedances: Case sink, sink ambient, etc. zero when modeling only case junction.
FIGURE TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
trr, REVERSE RECOVERY TIME (ns) FORWARD CURRENT 175°C 125°C
APT15DQ60K(G)
=125°C =400V
7.5A
25°C -55°C
ANODE-TO-CATHODE VOLTAGE Figure Forward Current Forward Voltage
=125°C =400V
1000 1200 1400 1600 -diF /dt, CURRENT RATE CHANGE(A/µs) Figure Reverse Recovery Time Current Rate Change IRRM, REVERSE RECOVERY CURRENT
=125°C =400V
Qrr, REVERSE RECOVERY CHARGE (nC) 7.5A
7.5A
1000 1200 1400 1600 -diF /dt, CURRENT RATE CHANGE (A/µs) Figure Reverse Recovery Charge Current Rate Change DYNAMIC PARAMETERS (Normalized 1000A/µs)
1000 1200 1400 1600 -diF /dt, CURRENT RATE CHANGE (A/µs) Figure Reverse Recovery Current Current Rate Change
Duty cycle =175°C
IRRM IF(AV)
JUNCTION TEMPERATURE (°C) Figure Dynamic Parameters Junction Temperature JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE Figure Junction Capacitance Reverse Voltage
Case Temperature (°C) Figure Maximum Average Forward Current CaseTemperature
053-4205
11-2008
APT15DQ60K(G)
+18V D.U.T.
trr/Qrr Waveform
Adjust
APT6017LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure Diode Test Circuit
Forward Conduction Current Rate Diode Current Change Through Zero Crossing. IRRM Maximum Reverse Recovery Current. Zero
0.25 IRRM
Reverse Recovery Time, measured from zero crossing where diode current goes from positive negative, point which straight line through IRRM 0.25 IRRM passes through zero. Area Under Curve Defined IRRM trr.
Figure Diode Reverse Recovery Waveform Definitions
TO-220 Package Outline
100%
053-4205
11-2008
Dimensions Millimeters (Inches)
Microsemi's products covered more U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
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