APT100GT120JRDL(G) Resonant Mode IGBT® Thunderbolt IGBT® use

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APT100GT120JRDL(G) Resonant Mode IGBT® Thunderbolt IGBT® use

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1200V
APT100GT120JRDL(G)
Resonant Mode IGBT®
Thunderbolt IGBT® used this Resonant Mode Combi generation high voltage power IGBTs. Using Non- Punch Through Technology, Thunderblot IGBT® offers superior ruggedness ultrafast switching speed.
Features Conduction Loss Gate Charge Ultrafast Tail Current shutoff forward Diode Voltage (VF) Ultrasoft Recovery Diode SSOA Rated RoHS Compliant Typical Applications Induction Heating
ISOTOP
Recognized"
file E145592
Welding Medical High Power Telecom
Resonant Mode Phase Shifted Bridge
Maximum Ratings Symbol Parameter
VCES SSOA TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 25°C Continuous Collector Current 100°C Pulsed Collector Current
Ratings: 25°C unless otherwise specified.
APT100GT120JRDL(G) 1200 200A 1200V Watts Amps
Unit
Volts
Switching Safe Operating Area 150°C Total Power Dissipation Operating Storage Junction Temperature Range Max. Lead Temp. Soldering: 0.063" from Case Sec.
Static Electrical Characteristics Symbol Characteristic Test Conditions
V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE 5mA) Gate Threshold Voltage (VCE VGE, 4mA, 25°C) Collector Emitter Voltage (VGE 15V, 100A, 25°C) Collector Emitter Voltage (VGE 15V, 100A, 125°C) Collector Cut-off Current (VCE 1200V, 25°C) Gate-Emitter Leakage Current (VGE ±20V) Integrated Gate Resistor
1200
1500
Unit
Volts
Collector Cut-off Current (VCE 1200V, 125°C)
052-6351 7-2008
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Microsemi Website http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP SSOA td(on) td(off) Eon1 Eon2 Eoff td(on) td(off) Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
APT100GT120JRDL(G)
Test Conditions 1MHz Gate Charge VCE= 600V 100A 150°C, 15V, 100H, VCE= 1200V Inductive Switching (25°C) 800V 100A +25°C
6700 6530 4380 10.0
Unit
17600 7240 22380 10950
Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy
Inductive Switching (125°C) 800V 100A 125°C
Thermal Mechanical Characteristics Symbol Characteristic Test Conditions
2500
29.2
0.22
Unit
°C/W
Junction Case (IGBT) Junction Case (DIODE) Package Weight Voltage (50-60Hz Sinusoidal Waveform from Terminals Mounting Base Min.)
0.80 Volts
VIsolation
Repetitive Rating: Pulse width limited maximum junction temperature. Combi devices, Ices includes both IGBT FRED leakages. MIL-STD-750 Method 3471. Eon1 clamped inductive turn-on energy IGBT only, without effect commutating diode reverse recovery current adding IGBT turn-on loss. Tested inductive switching test circuit shown figure with Silicon Carbide diode. Eon2 clamped inductive turn-on energy that includes commutating diode reverse recovery current IGBT turn-on switching loss. (See Figures 22.) Eoff clamped inductive turn-off energy measured accordance with JEDEC standard JESD24-1. (See Figures 23.) external gate resistance including gate driver impedance.
052-6351 7-2008 Microsemi reserves right change, without notice, specifications information contained herein.
Typical Performance Curves
25°C 125°C 150°C
APT100GT120JRDL(G)
COLLECTOR CURRENT
COLLECTOR CURRENT
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE Output Characteristics 25°C) VGE, GATE-TO-EMITTER VOLTAGE
250s PULSE TEST<0.5 DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE Output Characteristics 25°C)
100A 25°C
240V 600V
COLLECTOR CURRENT
960V
-55°C 25°C 125°C VGE, GATE-TO-EMITTER VOLTAGE FIGURE Transfer Characteristics
25°C. 250s PULSE TEST <0.5 DUTY CYCLE
GATE CHARGE (nC) FIGURE Gate charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
15V. 250s PULSE TEST <0.5 DUTY CYCLE
200A 100A
200A 100A
VGE, GATE-TO-EMITTER VOLTAGE FIGURE State Voltage Gate-to-Emitter Voltage 1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 COLLECTOR CURRENT
Junction Temperature (°C) FIGURE State Voltage Junction Temperature Case Temperature (°C) FIGURE Collector Current Case Temperature
JUNCTION TEMPERATURE FIGURE Threshold Voltage Junction Temperature
052-6351 7-2008
Typical Performance Curves
td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
800V 25°C, 125°C 100H
APT100GT120JRDL(G)
800V 100H =15V,TJ=125°C =15V,TJ=25°C
ICE, COLLECTOR-TO-EMITTER CURRENT FIGURE Turn-On Delay Time Collector Current RISE TIME (ns) FALL TIME (ns)
125°C,VGE 4.7, 100H, 800V
ICE, COLLECTOR-TO-EMITTER CURRENT FIGURE Turn-Off Delay Time Collector Current
25°C, 4.7, 100H, 800V
125°C,
ICE, COLLECTOR-TO-EMITTER CURRENT FIGURE Current Rise Time Collector Current 80000 EOFF, TURN ENERGY LOSS Eon2, TURN ENERGY LOSS 70000 60000 50000 40000 30000 20000 10000
25°C 125°C
800V +15V
ICE, COLLECTOR-TO-EMITTER CURRENT FIGURE Current Fall Time Collector Current 18000 16000 14000 12000 10000 8000 6000 4000 2000 ICE, COLLECTOR-TO-EMITTER CURRENT FIGURE Turn-Off Energy Loss Collector Current 80000 SWITCHING ENERGY LOSSES
800V +15V
800V +15V
125°C
25°C
ICE, COLLECTOR-TO-EMITTER CURRENT FIGURE Turn-On Energy Loss Collector Current 160000 SWITCHING ENERGY LOSSES 140000 120000 100000 80000 60000 40000 20000
Eoff,200A Eon2,100A
800V +15V 125°C
Eon2,200A
Eon2,200A
70000 60000 50000 40000 30000 20000 10000
052-6351 7-2008
Eoff,200A Eon2,100A Eoff,100A Eon2,50A Eoff,50A
Eoff,100A Eon2,50A Eoff,50A
GATE RESISTANCE (OHMS) FIGURE Switching Energy Losses Gate Resistance
JUNCTION TEMPERATURE (°C) FIGURE Switching Energy Losses Junction Temperature
Typical Performance Curves
10000 Cies COLLECTOR CURRENT CAPACITANCE (pF)
APT100GT120JRDL(G)
1000
Coes Cres
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE Capacitance Collector-To-Emitter Voltage
1000 1200 1400 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE Minimum Switching Safe Operating Area
0.25 ZJC, THERMAL IMPEDANCE (°C/W)
0.15
0.05 10-4 0.05 10-3 SINGLE PULSE
Note:
Duty Factor 1/t2 Peak
10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case Pulse Duration
FMAX, OPERATING FREQUENCY (kHz)
75°C
125°C 75°C 800V
max, max2) 0.05 max1 d(on) td(off) max2 Pdiss cond
(°C)
(°C)
Dissipated Power (Watts)
ZEXT
.045 .034
.0135 .0618
.039 17.42
100°C
Pdiss
ZEXT external thermal impedances: Case sink, sink ambient, etc. zero when modeling only case junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
COLLECTOR CURRENT Figure Operating Frequency Collector Current
052-6351 7-2008
APT100GT120JRDL(G)
td(on) Gate Voltage
-46.0ns 780.4V 422ns 34.13V 468ns 746.3V
125°C
APT2X31DL120
Collector Current Collector Voltage
Switching Energy
D.U.T.
Figure Inductive Switching Test Circuit
Figure Turn-on Switching Waveforms Definitions
125°C Gate Voltage
-226ns 97.34V 928ns 0.000V 1.15s 97.34V
Collector Voltage
td(off)
Collector Current
Switching Energy
Figure Turn-off Switching Waveforms Definitions
052-6351 7-2008
Typical Performance Curves
APT100GT120JRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol Characteristic Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current 50°C, Duty Cycle 0.5) Forward Current (Square wave, duty) Non-Repetitive Forward Surge Current 45°C,
Ratings: 25°C unless otherwise specified. APT100GT120JRDL
Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic Test Conditions
Forward Voltage 120A 60A, 125°C
Type
1.25
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
IRRM IRRM IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
THERMAL IMPEDANCE (°C/W) 10-4 10-3 0.05 SINGLE PULSE
Note:
Test Conditions
diF/dt -100A/µs, 30V, 25°C 60A, diF/dt -200A/µs 800V, 25°C
2694 5744 6182
Unit
Amps Amps Amps
60A, diF/dt -200A/µs 800V, 125°C
60A, diF/dt -1000A/µs 800V, 125°C
Duty Factor 1/t2 Peak
10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
(°C)
0.450
Dissipated Power (Watts)
(°C)
0.347 0.923
ZEXT external thermal impedances: Case sink, sink ambient, etc. zero when modeling only case junction.
0.0019
FIGURE TRANSIENT THERMAL IMPEDANCE MODEL
052-6351 7-2008
ZEXT
Typical Perfromance Curves
trr, REVERSE RECOVERY TIME (ns) FORWARD CURRENT ANODE-TO-CATHODE VOLTAGE Figure Forward Current Forward Voltage 1800 Qrr, REVERSE RECOVERY CHARGE (nC) 1600 1400 1200 1000 1000 1200 -diF /dt, CURRENT RATE CHANGE (A/µs) Figure Reverse Recovery Charge Current Rate Change DYNAMIC PARAMETERS (Normalized 1000A/µs) IRRM IF(AV) 37.5A
125°C 800V
APT100GT120JRDL(G)
150A 37.5A 1000 1200 -diF /dt, CURRENT RATE CHANGE(A/µs) Figure Reverse Recovery Time Current Rate Change IRRM, REVERSE RECOVERY CURRENT
125°C 800V
125°C 800V
125°C
175°C
25°C -55°C
150A
37.5A
150A
1000 1200 -diF /dt, CURRENT RATE CHANGE (A/µs) Figure Reverse Recovery Current Current Rate Change
Duty cycle 175°C
JUNCTION TEMPERATURE (°C) Figure Dynamic Parameters Junction Temperature JUNCTION CAPACITANCE (pF)
Case Temperature (°C) Figure Maximum Average Forward Current CaseTemperature
052-6351 7-2008
REVERSE VOLTAGE Figure Junction Capacitance Reverse Voltage
APT100GT120JRDL(G)
+18V D.U.T.
trr/Qrr Waveform
Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure Diode Test Circuit
Forward Conduction Current Rate Diode Current Change Through Zero Crossing. IRRM Maximum Reverse Recovery Current. Zero
0.25 IRRM
Reverse Recovery Time, measured from zero crossing where diode current goes from positive negative, point which straight line through IRRM 0.25 IRRM passes through zero. Area Under Curve Defined IRRM trr.
Figure Diode Reverse Recovery Waveform Definitions
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
(.129) (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Emitter/Anode
Collector/Cathode
Emitter/Anode terminals shorted internally. Current handling capability equal either Emitter/Anode terminal.
Emitter/Anode Dimensions Millimeters (Inches
Gate
Microsemi's products covered more U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
052-6351 7-2008

APT100GT120JRDL(G) Resonant Mode IGBT® Thunderbolt IGBT® use

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