3134-100M Watts, Volts, 100µs, Radar 3100-3400 3134-100M int
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3134-100M
3134-100M
Watts, Volts, 100µs, Radar 3100-3400
3134-100M internally matched, COMMON BASE bipolar transistor capable providing Watts pulsed output power 100µs pulse width, duty factor across 3100 3400 band. This hermetically solder-sealed transistor specifically designed S-band radar applications. utilizes gold metallization emitter ballasting provide high reliability supreme ruggedness.
CASE OUTLINE 55KS-1 Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage Current Collector Base Voltage (BVces) Emitter Base Voltage (BVebo) Collector Current (Ic) Maximum Temperatures Storage Temperature +200 Operating Junction Temperature +200
ELECTRICAL CHARACTERISTICS 25°C SYMBOL Pout Gain Droop VSWR-S VSWR-T CHARACTERISTICS Power Output Power Gain Collector Efficiency Droop Input Return Loss Stability Survivability TEST CONDITIONS F=3100-3400 Pulse Width Duty Cycle 1.5:1 2.0:1 UNITS
FUNCTIONAL CHARACTERISTICS 25°C SYMBOL BVebo BVces Ices Tstg CHARACTERISTICS Emitter Base Breakdown Collector Emitter Breakdown Collector Emitter Leakage Thermal Resistance Storage Temperature TEST CONDITIONS 0.35 UNITS °C/W
MICROSEMI RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE. VERIFY CURRENT VERSION PLEASE CHECK SITE WWW.MICROSEMI.COM CONTACT FACTORY DIRECTLY.
3134-100M
3134 100M
Input Output Impedance
Impedance Data Freq (GHz) Zsource 12.15 j3.61 11.78 j5.17 10.84 j6.46 9.58 j7.29 Zload 4.16 j5.98 4.17- j5.69 4.21 j5.42 4.26 j5.16
MICROSEMI RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE. VERIFY CURRENT VERSION PLEASE CHECK SITE WWW.MICROSEMI.COM CONTACT FACTORY DIRECTLY.
3134-100M
3134 100M
Broadband Test Circuit
MICROSEMI RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE. VERIFY CURRENT VERSION PLEASE CHECK SITE WWW.MICROSEMI.COM CONTACT FACTORY DIRECTLY.
3134-100M
3134 100M
MICROSEMI RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE. VERIFY CURRENT VERSION PLEASE CHECK SITE WWW.MICROSEMI.COM CONTACT FACTORY DIRECTLY.
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