MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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2N3866 2N3866A
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, To-39 packaged VHF/UHF Transistor Specified MHz, 28Vdc Characteristics Output Power Watt Minimum Gain Efficiency Current-Gain Bandwidth Product
Emitter Base Collector
TO-39
DESCRIPTION:
Silicon transistor, designed equipment. Applications include amplifier; pre-driver, driver, output stages. Also suitable oscillator frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 28.6 Watts
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.
2N3866 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase 25°C) STATIC (off)
Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage mAdc) Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Collector Cutoff Current (VCE Vdc, Vdc) Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc) Both mAdc, Vdc) 2N3866 mAdc, Vdc) 2N3866A Collector-Emitter Saturation Voltage mAdc, mAdc)
VCE(sat)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) 2N3866 2N3866A Value Typ. Max. Unit
January 2009
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.
2N3866 2N3866A
FUNCTIONAL
Symbol Power Gain Test Conditions Min. Test Circuit-Figure 28Vdc MHz, Test Circuit-Figure 28Vdc MHz, Test Circuit-Figure 28Vdc MHz, Value Typ. Max. Unit
Pout
Output Power
Watts
Collector Efficiency
8-60
POUT (RL=50 OHMS)
(RS=50 OHMS)
8-60
0.9-7
3-35
OHMS 1000
-28V
Figure AMPLIFIER CIRCUIT GPE, POUT, EFFICIENCY SPECIFICATIONS. TURNS wire, 1/8" long Capacitor values unless otherwise indicated. TURNS wire, 3/16" long Tuning capacitors variable
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.
2N3866 2N3866A
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency Freq (MHz) (dB) (mA) (dB) (dB)
SO-8 MRF4427, TO-39 2N4427 MRF553 POWER MACRO POWER MACRO MRF553T MRF607 TO-39 2N6255 TO-39 TO-72 2N5179
MACRO MRF559 MACRO MRF559 TO-39 2N3866A SO-8 MRF3866, POWER MACRO MRF555 POWER MACRO MRF555T
0.15 11.5 12.5 11.5 12.5 1.75 11.5 12.5 12.5
1000
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39
TO-72 TO-72 MACRO MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39
2N5109 MRF5943C 2N5179 2N2857 MRF517
MRF904 2N6304 BFR91 BFR96 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586
1200 1300 1600
11.4 1000
MRF5943,
4600
4000 1400
16.5 5000 14.5
12.5 12.5 12.5
12.5 12.5 12.5 12.5
MRF5812,
15.5 17.8 5000 5000 5000 1300 4500
17.8 5000 14.5 4500
MACRO MRF559 MACRO MRF559 SO-8 MRF8372,R1,R2 0.75 POWER MACRO MRF557 POWER MACRO MRF557T
MACRO MACRO MACRO MACRO
MRF951 MRF571 BFR91 BFR90
1000 1000 1000
8000 0.45 8000 5000
1000
12.5 5000
TO-39 TO-39
MRF545 MRF544
1400 13.5 1500
(Low Power General Purpose) Selection
(LNA General Purpose) Selection
Cost Plastic Package Options
Macro
Macro
Power
SO-8
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.
Ccb(pF) BVCE (mA)
Device
Ftau (MHz)
(dB)
Package
BVCEO
Packag
Device
Type
Type
Pout
2N3866 2N3866A
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.

MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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