Volts Amps VOLTAGE DROP SCHOTTKY DIODE Tungsten/Platinum schottky

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Volts Amps VOLTAGE DROP SCHOTTKY DIODE Tungsten/Platinum schottky

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MSASC25H45K MSASC25H45KR
Volts Amps VOLTAGE DROP SCHOTTKY DIODE
Tungsten/Platinum schottky barrier very Oxide passivated structure very leakage currents Guard ring protection increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, profile ceramic surface mount power package package inductance Very thermal resistance Available standard polarity (strap anode:MSASC25H45K) reverse polarity (strap cathode:MSASC25H45KR) TXV-level (MSASC25H45KV) S-level (MSASC25H45KS) screening i.a.w. Microsemi Internal Procedure PS11.50 available
Maximum Ratings 25qC (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Average Rectified Forward Current, 145qC derating, forward current, 145qC Nonrepetitive Peak Surge Current, half-sinewave Peak Repetitive Reverse Surge Current, 1Ps, 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction Case: MSASC25H45K MSASC25H45KR SYMBOL VRRM VRWM IF(ave) dIF/dT IFSM IRRM Tstg MAX. (3.3) +150 +150 0.85 0.95 UNIT Volts Volts Volts Amps Amps/qC Amps qC/W
Mechanical Outline
ThinKeyTM2
Datasheet# MSC1458B
MSASC25H45K MSASC25H45KR
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, d/cd SYMBOL CONDITIONS Vdc, 25qC Vdc, 125qC 25qC 10A, 25qC 20A, 25qC 50A, 25qC 10A, -55qC 10A, 125qC 25qC -55qC TYP. 1000 UNIT
Junction Capacitance Breakdown Voltage
typical
0.01
Datasheet# MSC1458B

Volts Amps VOLTAGE DROP SCHOTTKY DIODE Tungsten/Platinum schottky

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