Watts, Volts 1150 1000MP COMMON EMITTER transistor capable provid

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Watts, Volts 1150 1000MP COMMON EMITTER transistor capable provid

Datasheet Thumbnail

Top Searches for this datasheet

1000MP
Watts, Volts 1150
1000MP COMMON EMITTER transistor capable providing Watt Class output power 1150 MHz. This transistor specifically designed general Class amplifier applications. utilizes gold metalization diffused ballasting provide high reliability supreme ruggedness.
CASE OUTLINE 55FW
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation 25°C Maximum Voltage Current Collector Base Voltage (BVces) Emitter Base Voltage (BVebo) Collector Current (Ic) Maximum Temperatures Storage Temperature +150 Operating Junction Temperature +200
ELECTRICAL CHARACTERISTICS 25°C SYMBOL Pout VSWR CHARACTERISTICS Power Output Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS 1150 Volts 0.05 10.8 10:1 UNITS
FUNCTIONAL CHARACTERISTICS 25°C Emitter Base Breakdown BVebo BVcbo Collector Base Breakdown Ices Collector Emitter Leakage Current Gain Capacitance Thermal Resistance Note rated output power Updated June 2009 Vce=28V 28V, °C/W
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.
1000MP CASE DRAWING:
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.
1000MP TEST CIRCUIT:
Microsemi reserves right change, without notice, specifications information contained herein. Visit site www.microsemi.com contact factory direct.

Watts, Volts 1150 1000MP COMMON EMITTER transistor capable provid

Top Searches for this datasheet

Other recent searches