Silicon N-channel dual gate MOS-FET Rev. November 2007 Product da

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Silicon N-channel dual gate MOS-FET Rev. November 2007 Product da

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BF992
Silicon N-channel dual gate MOS-FET
Rev. November 2007 Product data sheet
Dear customer, from October 1st, 2006 Philips Semiconductors trade name Semiconductors, which will used future data sheets together with contact details. data sheets where previous Philips references remain, please links shown below. http://www.nxp.com http://www.nxp.com (Internet) salesaddresses@nxp.com (email) copyright notice bottom each page elsewhere document, depending version) Koninklijke Philips Electronics N.V. (year). rights reserved replaced with: B.V. (year). rights reserved. have questions related data sheet, please contact nearest sales office e-mail phone (details salesaddresses@nxp.com). Thank your cooperation understanding, Semiconductors
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
APPLICATIONS applications such television tuners tuners with supply voltage. device also suitable professional communications equipment. DESCRIPTION Depletion type field-effect transistor plastic micro-miniature SOT143B package with source substrate interconnected. transistor protected against excessive input voltage surges integrated back-to-back diodes between gates source. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
view Marking code: %MB.
BF992
PINNING SYMBOL source drain gate gate DESCRIPTION
handbook, halfpage
MAM039
Fig.1
Simplified outline (SOT143B) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s PARAMETER drain-source voltage (DC) drain current (DC) total power dissipation forward transfer admittance input capacitance gate reverse transfer capacitance noise figure operating junction temperature Tamb kHz; VG2-S MHz; VG2-S MHz; VG2-S VG2-S CONDITIONS TYP. MAX. UNIT
Rev. November 2007
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note Device mounted ceramic substrate, PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature Tamb Fig.2; note CONDITIONS MIN. MAX. +150
BF992
UNIT
MBL033
handbook, halfpage
Ptot (mW)
Tamb
Fig.2 Power derating curves.
Rev. November 2007
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
THERMAL CHARACTERISTICS SYMBOL Note Device mounted ceramic substrate, STATIC CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S IG1-SS VG1-S IG2-SS VG2-S VG1-S VG2-S VG1-S VG1-S VG2-S MIN. PARAMETER thermal resistance from junction ambient free CONDITIONS note VALUE
BF992
UNIT
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage ±V(BR)G2-SS gate 2-source breakdown voltage -V(P)G1-S -V(P)G2-S ±IG1-SS ±IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage gate cut-off current gate cut-off current
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance reverse transfer capacitance noise figure MHz; CONDITIONS MIN. TYP. MAX. UNIT
Rev. November 2007
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
handbook, halfpage
MGE797
(mA)
handbook, halfpage
MGE799
4V3V VG2-S
VG1-S
(mA)
-0.1 -0.2 -0.3
-0.4 -0.5 -0.6
VG1-S
VG2-S
Fig.3 Output characteristics; typical values.
Fig.4 Transfer characteristics; typical values.
handbook, halfpage
MGE798
handbook, halfpage
MGE800
|yfs| (mS)
(mS)
VG2-S
VG2-S (mA)
VG1-S
Fig.5
Forward transfer admittance function drain current; typical values.
Fig.6
Forward transfer admittance function gate 1-source voltage; typical values.
Rev. November 2007
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
handbook, halfpage (mS)
MGE794
MGE793
handbook, halfpage
(mS)
10-1 10-1
10-2
(MHz)
10-2 (MHz)
VG2-S Tamb
VG2-S Tamb
Fig.7
Input admittance function frequency; typical values.
Fig.8
Output admittance function frequency; typical values.
handbook, halfpage
MGE795
(mS)
handbook, halfpage
MGE796
(µS)
-brs
-bfs
(MHz)
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.9
Forward transfer admittance function frequency; typical values.
Fig.10 Reverse transfer admittance function frequency; typical values.
Rev. November 2007
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
PACKAGE OUTLINE Plastic surface mounted package; leads
BF992
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Rev. November 2007
Semiconductors
BF992
Silicon N-channel dual gate MOS-FET
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
Product status[3] Development Qualification Production
Definition This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. term `short data sheet' explained section "Definitions". product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com.
Definitions
Draft document draft version only. content still under internal review subject formal approval, which result modifications additions. Semiconductors does give representations warranties accuracy completeness information included herein shall have liability consequences such information. Short data sheet short data sheet extract from full data sheet with same product type number(s) title. short data sheet intended quick reference only should relied upon contain detailed full information. detailed full information relevant full data sheet, which available request local Semiconductors sales office. case inconsistency conflict with short data sheet, full data sheet shall prevail.
malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights.
Disclaimers
General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure
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Contact information
additional information, please visit: http://www.nxp.com sales office addresses, send email salesaddresses@nxp.com
Rev. November 2007
Semiconductors
BF992
Silicon N-channel dual gate MOS-FET
Revision history
Revision history Document BF992_N_4 Modifications: BF992_3 (9397 06013) BF992_2 BF992_SF_1 Release date 20071121 Data sheet status Product data sheet Product specification Product specification Change notice Supersedes BF992_3 BF992_2 BF992_SF_1
Fig. page Figure note changed
19990811 19960730
Please aware that important notices concerning this document product(s) described herein, have been included section `Legal information'.
B.V. 2007.
rights reserved.
more information, please visit: http://www.nxp.com sales office addresses, please send email salesaddresses@nxp.com Date release: November 2007 Document identifier: BF992_N_4

Silicon N-channel dual gate MOS-FET Rev. November 2007 Product da

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