N-channel dual gate MOS-FETs Rev. November 2007 Product data shee

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N-channel dual gate MOS-FETs Rev. November 2007 Product data shee

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BF909; BF909R
N-channel dual gate MOS-FETs
Rev. November 2007 Product data sheet
Dear customer, from October 1st, 2006 Philips Semiconductors trade name Semiconductors, which will used future data sheets together with contact details. data sheets where previous Philips references remain, please links shown below. http://www.nxp.com http://www.nxp.com (Internet) salesaddresses@nxp.com (email) copyright notice bottom each page elsewhere document, depending version) Koninklijke Philips Electronics N.V. (year). rights reserved replaced with: B.V. (year). rights reserved. have questions related data sheet, please contact nearest sales office e-mail phone (details salesaddresses@nxp.com). Thank your cooperation understanding, Semiconductors
Semiconductors
Product specification
N-channel dual gate MOS-FETs
FEATURES Specially designed supply voltage High forward transfer admittance Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC. APPLICATIONS applications with supply voltage such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT143 SOT143R package.
BF909; BF909R
transistor consists amplifier MOS-FET with source substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
PINNING SYMBOL source drain gate gate DESCRIPTION
handbook, halfpage
handbook, halfpage
view
view
MAM124
MAM125
BF909 marking code: %M3.
BF909R marking code: %M4.
Fig.1 Simplified outline (SOT143) symbol.
Fig.2 Simplified outline (SOT143R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF909 BF909R Tstg Note Device mounted printed-circuit board. storage temperature operating junction temperature Fig.3 Tamb note Tamb note CONDITIONS MIN.
BF909; BF909R
MAX. +150
UNIT
MLB935
handbook, halfpage
Ptot (mW)
BF909R BF909
Tamb
Fig.3 Power derating curves.
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF909 BF909R thermal resistance from junction soldering point BF909 BF909R Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note connects gate Fig.18. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG1-S VG2-S VG2-S VG1-S note PARAMETER thermal resistance from junction ambient CONDITIONS note
BF909; BF909R
VALUE
UNIT
MIN.
MAX.
UNIT
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance noise figure MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. MAX. UNIT
reverse transfer capacitance
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB936
MLB937
handbook, halfpage
handbook, halfpage
Vunw (dBµV)
(mA)
gain reduction (dB)
MHz. funw MHz; Tamb
Fig.4
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.18.
Fig.5 Transfer characteristics; typical values.
MLB938
handbook, halfpage
handbook, halfpage
MLB939
(mA)
(µA)
VG2-S
Fig.7 Fig.6 Output characteristics; typical values.
Gate current function gate voltage; typical values.
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB940
MLB941
handbook, halfpage
handbook, halfpage
(mS)
(mA)
(mA) (µA)
VG2-S
Fig.8
Forward transfer admittance function drain current; typical values.
Fig.9
Drain current function gate current; typical values.
handbook, halfpage
MLB942
MLB943
handbook, halfpage
(mA)
(mA)
VG2-S (connected VGG);
VG2-S connected VGG;
Fig.10 Drain current function gate supply voltage VGG); typical values; Fig.18.
Fig.11 Drain current function gate VGG) drain supply voltage; typical values; Fig.18.
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB944
handbook, halfpage
(mA)
handbook, halfpage
MLB945
(µA)
(connected VGG).
(connected VGG).
Fig.12 Drain current function gate voltage; typical values; Fig.18.
Fig.13 Gate current function gate voltage; typical values; Fig.18.
handbook, halfpage (mS)
MLB946
(µS)
MLB947
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.14 Input admittance function frequency; typical values.
Fig.15 Reverse transfer admittance phase function frequency; typical values.
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB948
MLB949
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.16 Forward transfer admittance phase function frequency; typical values.
Fig.17 Output admittance function frequency; typical values.
VAGC
MLD151
Fig.18 Cross-modulation test set-up.
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table (MHz) 1000 Table Scattering parameters: Tamb VG2-S MAGNITUDE (ratio) 0.985 0.978 0.957 0.931 0.899 0.868 0.848 0.816 0.792 0.772 0.754 ANGLE (deg) -6.4 -12.6 -25.0 -36.5 -47.6 -57.4 -66.6 -74.6 -82.2 -89.3 -95.6 MAGNITUDE (ratio) 4.064 3.997 3.886 3.682 3.484 3.260 3.053 2.829 2.652 2.470 2.328 ANGLE (deg) 172.3 164.9 150.8 137.3 123.8 111.7 101.0 90.3 79.9 69.5 59.5 MAGNITUDE (ratio) 0.001 0.002 0.005 0.006 0.007 0.007 0.006 0.005 0.005 0.005 0.006 ANGLE (deg) 86.9 82.7 74.3 68.9 59.6 57.9 58.5 65.5 83.3 114.9 138.7
BF909; BF909R
MAGNITUDE (ratio) 0.985 0.982 0.973 0.960 0.947 0.936 0.927 0.919 0.913 0.910 0.909 ANGLE (deg) -3.2 -6.4 -12.6 -18.6 -24.2 -29.6 -34.8 -39.8 -44.6 -49.5 -54.6
Noise data: Tamb VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.603 (deg) 67.71 0.581
Rev. November 2007
Semiconductors
Product specification
N-channel dual gate MOS-FETs
PACKAGE OUTLINES
BF909; BF909R
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.19 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090
0.48 0.38
0.88 0.78
MBC844
VIEW
Dimensions
Fig.20 SOT143R.
Rev. November 2007
Semiconductors
BF909; BF909R
N-channel dual gate MOS-FETs
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
Product status[3] Development Qualification Production
Definition This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. term `short data sheet' explained section "Definitions". product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com.
Definitions
Draft document draft version only. content still under internal review subject formal approval, which result modifications additions. Semiconductors does give representations warranties accuracy completeness information included herein shall have liability consequences such information. Short data sheet short data sheet extract from full data sheet with same product type number(s) title. short data sheet intended quick reference only should relied upon contain detailed full information. detailed full information relevant full data sheet, which available request local Semiconductors sales office. case inconsistency conflict with short data sheet, full data sheet shall prevail.
malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights.
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Contact information
additional information, please visit: http://www.nxp.com sales office addresses, send email salesaddresses@nxp.com
Rev. November 2007
Semiconductors
BF909; BF909R
N-channel dual gate MOS-FETs
Revision history
Revision history Document BF909_N_2 Modifications: BF909_1 Release date 20071119 Data sheet status Product data sheet Product specification Change notice Supersedes BF909_1
Fig.1 page Figure note changed
19950425
Please aware that important notices concerning this document product(s) described herein, have been included section `Legal information'.
B.V. 2007.
rights reserved.
more information, please visit: http://www.nxp.com sales office addresses, please send email salesaddresses@nxp.com Date release: November 2007 Document identifier: BF909_N_2

N-channel dual gate MOS-FETs Rev. November 2007 Product data shee

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