Dual-gate MOS-FETs Rev. November 2007 Product data sheet Dea

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Dual-gate MOS-FETs Rev. November 2007 Product data sheet Dea

Datasheet Thumbnail

Top Searches for this datasheet

BF908; BF908R
Dual-gate MOS-FETs
Rev. November 2007 Product data sheet
Dear customer, from October 1st, 2006 Philips Semiconductors trade name Semiconductors, which will used future data sheets together with contact details. data sheets where previous Philips references remain, please links shown below. http://www.nxp.com http://www.nxp.com (Internet) salesaddresses@nxp.com (email) copyright notice bottom each page elsewhere document, depending version) Koninklijke Philips Electronics N.V. (year). rights reserved replaced with: B.V. (year). rights reserved. have questions related data sheet, please contact nearest sales office e-mail phone (details salesaddresses@nxp.com). Thank your cooperation understanding, Semiconductors
Semiconductors
Product specification
Dual-gate MOS-FETs
FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier GHz. APPLICATIONS applications with supply voltage, such television tuners professional communications equipment. DESCRIPTION Fig.1 Depletion type field-effect transistor plastic microminiature SOT143 SOT143R package. transistors protected against excessive input voltage surges integrated back-to-back diodes between gates source. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
handbook, halfpage
handbook, halfpage
BF908; BF908R
view
MAM039
BF908 marking code: %M1.
Simplified outline (SOT143) symbol; BF908.
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM040
BF908R marking code: %M2.
Fig.2
Simplified outline (SOT143R) symbol; BF908R.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
Rev. November 2007
Semiconductors
Product specification
Dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL ±IG1 ±IG2 Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF908 BF908R Tstg Note Device mounted printed-circuit board. storage temperature operating junction temperature Fig.3; note Tamb Tamb CONDITIONS
BF908; BF908R
MIN.
MAX. +150
UNIT
handbook, halfpage
MRC275
(mW)
BF908 BF908R
Tamb
Fig.3 Power derating curves.
Rev. November 2007
Semiconductors
Product specification
Dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF908 BF908R Note Device mounted printed-circuit board. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S IG1-S VG1-S IG2-S PARAMETER thermal resistance from junction ambient CONDITIONS note
BF908; BF908R
VALUE
UNIT
MIN.
TYP.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage ±V(BR)G2-SS gate 2-source breakdown voltage -V(P)G1-S -V(P)G2-S IDSS ±IG1-SS ±IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate cut-off current gate cut-off current
VG2-S VG1-S VG2-S VG1-S VG2-S VG1-S VG1-S VG2-S
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance reverse transfer capacitance noise figure MHz; BSopt MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. MAX. UNIT
Rev. November 2007
Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
handbook, halfpage
MRC281
MRC282
(mA)
VG2-S
handbook, halfpage
VG1-S
(mA)
-0.1 -0.2
-0.6 -0.4 -0.2
-0.3
VG1-S
VG2-S
Fig.4 Transfer characteristics; typical values.
Fig.5 Output characteristics; typical values.
(mS)
MRC280
(mS)
MRC276
VG2-S (mA)
VG2-S
Fig.6
Forward transfer admittance function drain current; typical values.
Fig.7
Forward transfer admittance function junction temperature; typical values.
Rev. November 2007
Semiconductors
Product specification
Dual-gate MOS-FETs
Table (MHz) Scattering parameters MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg)
BF908; BF908R
MAGNITUDE (ratio) ANGLE (deg)
VG2-S Tamb 1000 0.998 0.994 0.979 0.962 0.939 0.914 0.892 0.865 0.837 0.811 0.785 -5.1 -10.4 -20.8 -30.3 -40.1 -49.1 -57.1 -64.4 -71.6 -78.1 -84.5 -5.3 -10.9 -21.6 -31.7 -41.7 -51.1 -59.1 -66.8 -73.9 -80.7 -87.0 3.537 3.502 3.450 3.318 3.234 3.093 2.912 2.774 2.616 2.479 3.329 173.5 167.7 154.9 143.7 131.9 120.7 111.1 101.0 91.4 81.9 72.5 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.003 98.2 88.8 74.6 69.5 65.6 64.4 63.1 65.2 70.8 87.4 108.0 0.996 0.994 0.987 0.983 0.980 0.974 0.969 0.966 0.965 0.965 0.966 -2.4 -4.9 -9.5 -13.9 -18.5 -22.8 -27.0 -31.2 -35.4 -39.4 -43.7 -2.4 -5.0 -9.7 -14.2 -18.8 -23.2 -27.4 -31.6 -35.9 -40.0 -44.2
VG2-S Tamb 1000 Table 0.998 0.994 0.976 0.957 0.934 0.907 0.885 0.851 0.826 0.797 0.773 Noise data (MHz) Fmin (dB) (ratio) (deg) 3.983 3.943 3.878 3.722 3.614 3.446 3.240 3.072 2.891 2.733 2.569 173.4 167.5 154.7 143.3 131.6 120.4 110.9 100.9 91.3 81.9 72.8 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.004 95.5 93.6 74.3 70.0 63.5 62.2 59.6 64.8 67.8 85.0 102.9 0.994 0.991 0.984 0.979 0.975 0.969 0.964 0.961 0.959 0.958 0.958
VG2-S Tamb 1.50 0.720 56.7 0.580 VG2-S Tamb 1.50 0.700 59.2 0.520
Rev. November 2007
Semiconductors
Product specification
Dual-gate MOS-FETs
PACKAGE OUTLINES
BF908; BF908R
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.8 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090
0.48 0.38
0.88 0.78
MBC844
VIEW
Dimensions
Fig.9 SOT143R.
Rev. November 2007
Semiconductors
BF908; BF908R
Dual-gate MOS-FETs
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
Product status[3] Development Qualification Production
Definition This document contains data from objective specification product development. This document contains data from preliminary specification. This document contains product specification.
Please consult most recently issued document before initiating completing design. term `short data sheet' explained section "Definitions". product status device(s) described this document have changed since this document published differ case multiple devices. latest product status information available Internet http://www.nxp.com.
Definitions
Draft document draft version only. content still under internal review subject formal approval, which result modifications additions. Semiconductors does give representations warranties accuracy completeness information included herein shall have liability consequences such information. Short data sheet short data sheet extract from full data sheet with same product type number(s) title. short data sheet intended quick reference only should relied upon contain detailed full information. detailed full information relevant full data sheet, which available request local Semiconductors sales office. case inconsistency conflict with short data sheet, full data sheet shall prevail.
malfunction Semiconductors product reasonably expected result personal injury, death severe property environmental damage. Semiconductors accepts liability inclusion and/or Semiconductors products such equipment applications therefore such inclusion and/or customer's risk. Applications Applications that described herein these products illustrative purposes only. Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. Limiting values Stress above more limiting values defined Absolute Maximum Ratings System 60134) cause permanent damage device. Limiting values stress ratings only operation device these other conditions above those given Characteristics sections this document implied. Exposure limiting values extended periods affect device reliability. Terms conditions sale Semiconductors products sold subject general terms conditions commercial sale, published including those pertaining warranty, intellectual property rights infringement limitation liability, unless explicitly otherwise agreed writing Semiconductors. case inconsistency conflict between information this document such terms conditions, latter will prevail. offer sell license Nothing this document interpreted construed offer sell products that open acceptance grant, conveyance implication license under copyrights, patents other industrial intellectual property rights.
Disclaimers
General Information this document believed accurate reliable. However, Semiconductors does give representations warranties, expressed implied, accuracy completeness such information shall have liability consequences such information. Right make changes Semiconductors reserves right make changes information published this document, including without limitation specifications product descriptions, time without notice. This document supersedes replaces information supplied prior publication hereof. Suitability Semiconductors products designed, authorized warranted suitable medical, military, aircraft, space life support equipment, applications where failure
Trademarks
Notice: referenced brands, product names, service names trademarks property their respective owners.
Contact information
additional information, please visit: http://www.nxp.com sales office addresses, send email salesaddresses@nxp.com
Rev. November 2007
Semiconductors
BF908; BF908R
Dual-gate MOS-FETs
Revision history
Revision history Document BF908-R_N_3 Modifications: BF908-R_2 BF908R_1 Release date 20071114 Data sheet status Product data sheet Product specification Change notice Supersedes BF908-R_2 BF908R_1
Fig. page Figure note changed
19960730
Please aware that important notices concerning this document product(s) described herein, have been included section `Legal information'.
B.V. 2007.
rights reserved.
more information, please visit: http://www.nxp.com sales office addresses, please send email salesaddresses@nxp.com Date release: November 2007 Document identifier: BF908-R_N_3

Dual-gate MOS-FETs Rev. November 2007 Product data sheet Dea

Top Searches for this datasheet

Other recent searches