Silicon Power Transistors DESCRIPTION With TO-3 package High volt
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Silicon Power Transistors
DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid relay drivers Deflection circuits
PINNING Base Emitter Collector DESCRIPTION
2N6674 2N6675
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER 2N6674 VCBO Collector-base voltage 2N6675 2N6674 VCEO Collector-emitter voltage 2N6675 VEBO Emitter-base voltage Collector current Base current Ta=25 Total Power Dissipation TC=25 Tstg Junction temperature Storage temperature -65~200 Open collector Open base Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
2N6674 2N6675
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. UNIT
2N6674 VCEO(SUS) Collector-emitter sustaining voltage 2N6675 IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=2A
VCEsat-2
Collector-emitter saturation voltage
IC=15A; IB=5A
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2A
2N6674 ICBO Collector cut-off current 2N6675
VCB=450V; IE=0 VCB=650V; IE=0
IEBO hFE-1
Emitter cut-off current
VEB=7V; IC=0 IC=1A VCE=3V
current gain
hFE-2
current gain
IC=10A VCE=2V
Trainsistion frequency
IC=0.5A VCE=10V;f=1MHz
Silicon Power Transistors
PACKAGE OUTLINE
2N6674 2N6675
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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