Silicon Power Transistors DESCRIPTION With TO-220 package High po
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Silicon Power Transistors
DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier medium speed switching applications
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
2N5294 2N5296 2N5298
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER 2N5294 VCBO Collector-base voltage 2N5296 2N5298 2N5294 VCEO Collector-emitter voltage 2N5296 2N5298 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case 3.47 UNIT
JMnic
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2N5294 VCEO(SUS) Collector-emitter sustioning voltage 2N5296 2N5298 2N5294 VCEsat Collector-emitter saturation voltage 2N5296 2N5298 2N5294 Base-emitter voltage 2N5296 2N5298 2N5294/5298 ICEV Collector cut-off current 2N5296 ICER Collector cut-off current 2N5294/5298 2N5294 IEBO Emitter cut-off current 2N5296/5298 2N5294 current gain 2N5296 2N5298 Transition frequency 2N5294 Turn-on time 2N5296 2N5298 2N5294 toff Turn-off time 2N5296 2N5298 VEB=5V; IC=0 IC=0.1A ;IB=0
2N5294 2N5296 2N5298
CONDITIONS
TYP.
UNIT
IC=0.5A;IB=0.05A IC=1.0A;IB=0.1A IC=1.5A;IB=0.15A IC=0.5A VCE=4V IC=1.0A VCE=4V IC=1.5A VCE=4V VCE=65V;VBE=1.5V TC=150 VCE=35V;VBE=1.5V TC=150 VCE=50V;RBE=100 TC=150 VEB=7V; IC=0
IC=0.5A VCE=4V IC=1.0A VCE=4V IC=1.5A VCE=4V IC=0.2A VCE=4V IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V
JMnic
Silicon Power Transistors
PACKAGE OUTLINE
2N5294 2N5296 2N5298
Fig.2 Outline dimensions(unindicated tolerance:±0.10
JMnic
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