P-Channel Silicon MOSFET 2SJ259 Features resistance. Ul

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P-Channel Silicon MOSFET 2SJ259 Features resistance. Ul

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Ordering number:EN4233
P-Channel Silicon MOSFET
2SJ259
Features
resistance. Ultrahigh-speed switching. Low-voltage drive. Surface mount type device making following possible. Reduction number manufacturing processes 2SJ259-applied equipment. High density surface mount applications. Small size 2SJ259-applied equipment.
Package Dimensions
unit:mm 2093A
[2SJ259]
10.2
11.5
20.9
11.0
2.55
2.55
Gate Drain Source SANYO
unit:mm 2090A
10.2
[2SJ259]
1.5max
2.55
2.55
1.35
2.55
2.55
Gate Drain Source SANYO SMP-FD
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42899TH (KT)/51193TH (KOTO) AX-8376 No.4233-1/4
2SJ259 Specifications
Absolute Maximum Ratings 25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg
PW10µs, duty cycle1% Tc=25°C
Conditions
Ratings 1.65 +150
Unit
Electrical Characteristics 25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0 IG=±100µA, VDS=0 VDS=-30V, VGS=0 VGS=±12V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-10A ID=-10A, VGS=-10V ID=-10A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit specified Test Circuit specified Test Circuit specified Test Circuit IS=-20A, VGS=0 -1.0 2000 1200 -1.0 -1.5 Conditions Ratings -100 -2.0 Unit
Switching Time Test Circuit
No.4233-2/4
2SJ259
No.4233-3/4
2SJ259
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information April, 1999. Specifications information herein subject change without notice.
No.4233-4/4

P-Channel Silicon MOSFET 2SJ259 Features resistance. Ul

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