µPA1728 DESCRIPTION µPA1728 N-Channel Field Effect Transisto

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µPA1728 DESCRIPTION µPA1728 N-Channel Field Effect Transisto

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FIELD EFFECT TRANSISTOR
µPA1728
DESCRIPTION
µPA1728 N-Channel Field Effect Transistor designed high current switching applications.
PACKAGE DRAWING (Unit:
Source Gate Drain
FEATURES
Single chip type On-state Resistance
1.44
RDS(on)1 (TYP.) (VGS
Max.
5.37 Max.
±0.3
+0.10 -0.05
RDS(on)2 (TYP.) (VGS RDS(on)3 (TYP.) (VGS Ciss Ciss 1700 (TYP.) Built-in protection diode Small surface mount package (Power SOP8)
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1728
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected.)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (Pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Gate
Body Diode
Gate Protection Diode
Source
Notes Duty cycle Mounted ceramic substrate 1200 Starting 25°C, Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage Exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14321EJ2V0DS00 (2nd edition) Date Published April 2001 CP(K) Printed Japan
mark shows major revised points.
1999,2000,2001
µPA1728
ELECTRICAL CHARACTERISTICS 25°C, terminals connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt 100A/µs TEST CONDITIONS 1700 0.82 MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
Duty Cycle
Wave Form
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet G14321EJ2V0DS
µPA1728
TYPICAL CHARACTERISTICS 25°C
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate 1200mm
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
Ambient Temperature
ID(pulse)
Drain Current
ID(DC)
Remark Mounted ceramic substrate 1200
0.01
25°C Single Pulse Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5°C/W
0.01 0.001 100µ
Mounted ceramic substrate 1200 Single Pulse 1000
Pulse Width
Data Sheet G14321EJ2V0DS
µPA1728
FORWARD TRANSFER CHARACTERISTICS Pulsed
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Drain Current
Drain Current
-25°C 25°C 75°C 150°C
Pulsed
0.01
Gate Source Voltage
Drain Source Voltage
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Forward Transfer Admittance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Pulsed
150°C 75°C 25°C -25°C
0.01 0.01
Drain Current
RDS(on) Drain Source On-state Resistance
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
VGS(off) Gate Cut-off Voltage
Drain Current
Channel Temperature
Data Sheet G14321EJ2V0DS
µPA1728
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
0.01
Channel Temperature
CAPACITANCE DRAIN SOURCE VOLTAGE
Source Drain Voltage
SWITCHING CHARACTERISTICS 1000
td(on), td(off), Switching Time
10000
Ciss, Coss, Crss Capacitance
1000
Ciss
td(off)
Coss Crss
td(on)
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time
Drain Source Voltage
di/dt A/µs
Drain Current
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Current
Gate Charge
Data Sheet G14321EJ2V0DS
µPA1728
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
Single Avalanche Current
Energy Derating Factor
SINGLE AVALANCHE ENERGY DERATING FACTOR
Inductive Load
Starting Starting Channel Temperature
Data Sheet G14321EJ2V0DS
µPA1728
[MEMO]
Data Sheet G14321EJ2V0DS
µPA1728
information this document current April, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1728 DESCRIPTION µPA1728 N-Channel Field Effect Transisto

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