µPA1700A DESCRIPTION PA1700A N-Channel Field Effect Transist

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µPA1700A DESCRIPTION PA1700A N-Channel Field Effect Transist

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FIELD EFFECT POWER TRANSISTORS
µPA1700A
DESCRIPTION
PA1700A N-Channel Field Effect Transistor designed DC/DC converters power management notebook computers.
PACKAGE DRAWING (Unit
1,2,3 Source Gate 5,6,7,8 Drain
FEATURES
On-Resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Input Capacitance Ciss TYP. Built-in Protection Diode Small Surface Mount Package (Power SOP8)
1.44
5.37 MAX.
+0.10 -0.05
±0.3
MAX.
0.15
0.05 MIN.
±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12
ABSOLUTE MAXIMUM RATINGS 25°C, terminals connected)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
±7.0 +150
Gate Protection Diode Source Gate Drain
EQUIVALENT CIRCUIT
Total Power Dissipation 25°C) Channel Temperature Storage Temperature
Body Diode
Notes Duty Cycle Mounted ceramic substrate 1200
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G12008EJ2V0DS00 (2nd edition) Date Published 2001 Printed Japan
mark shows major revised points
1996
µPA1700A
ELECTRICAL CHARACTERISTICS 25°C, terminals connected)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt A/µs 0.79 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
td(on) td(off) toff
TEST CIRCUIT GATE CHARGE
D.U.T.
VGS(on)
Wave Form
Duty Cycle
Wave Form
Data Sheet G12008EJ2V0DS
µPA1700A
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Percentage Rated Power
Mounted ceramic substrate 1200 mm2x1.7
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Note: Mounted ceramic substrate 1200 mm2x1.7
Drain Current
ID(DC)
25°C Single Pulse
0.01
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Mounted ceramic substrate 1200 mm2x1.7 Single Single Pulse Pulse Channel Ambient 1000
0.01 0.001
Pulse Width
Data Sheet G12008EJ2V0DS
µPA1700A
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
Tch=125°C 75°C 25°C -25°C
Gate Source Voltage
Drain Source Voltage
|yfs| Forward Transfer Admittance
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Pulsed Tch= -25°C 25°C 75°C 125°C
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed Drain Current VGS=10 VGS=
VGS(off) Gate Source Cutoff Voltage
GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
Channel Temperature
Data Sheet G12008EJ2V0DS
µPA1700A
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
td(off) td(on)
Ciss Coss
Crss
VGS(on)
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Reverse Recovery Time
Drain Source Voltage
Diode Current
Gate Charge
Data Sheet G12008EJ2V0DS
Gate Source Voltage
di/dt =100
µPA1700A
REFERENCE
Document Name semiconductor device reliability quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide quality assurance semiconductor devices Application circuits using Power Safe operating area Power
Document C11745E C11531E C10535E C10943X MEI-1202 TEA-1035 TEA-1037
Data Sheet G12008EJ2V0DS
µPA1700A
[MEMO]
Data Sheet G12008EJ2V0DS
µPA1700A
information this document current May, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1700A DESCRIPTION PA1700A N-Channel Field Effect Transist

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