DSA10 Diffused Junction Type Silicon Diode 1.0A Power Rectif
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Ordering number:EN711D
DSA10
Diffused Junction Type Silicon Diode
1.0A Power Rectifier
Features
Plastic molded type. Peak Reverse Voltage VRM=600 1000V Average Rectified Current IO=1A.
Package Dimensions
unit:mm 1005
[DSA10]
Specifications
Absolute Maximum Ratings 25°C
Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature Symbol IFSM Tstg Conditions DSA10G DSA10J
C:Cathode A:Anode
DSA10L 1000
Unit
Ta=25°C
50Hz sine wave, cycle
+150
Electrical Characteristics 25°C
Parameter Forward Voltage Reverse Current Symbol IF=1.0A VR:At each Conditions Ratings Unit
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53098HA (KT)/D218TA, No.711-1/2
DSA10
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information May, 1998. Specifications information herein subject change without notice.
No.711-2/2
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