15C02CH Epitaxial Planar Silicon Transistor 15C02CH Low

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15C02CH Epitaxial Planar Silicon Transistor 15C02CH Low

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Ordering number ENN7353A
15C02CH
Epitaxial Planar Silicon Transistor
15C02CH
Low-Frequency General-Purpose Amplifier Applications
Applications
Package Dimensions
unit 2150A
[15C02CH]
Low-frequency amplifer, high-speed switching, small motor drive.
Features
Large current capacitance. collector-to-emitter saturation voltage (resistance). RCE(sat) typ=300m[IC=1A, IB=50mA]. Ultrasmall package facilitates miniaturization products. Small ON-resistance (Ron).
0.05
Base Emitter Collector SANYO CPH3
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions Ratings Mounted ceramic board (600mm2!0.8mm) +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO VCE(sat) VBE(sat) VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=50mA VCB=10V, f=1MHz IC=400mA, IB=20mA IC=400mA, IB=20mA Conditions Ratings Unit
Marking
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003 13003 TA-100126 No.7353-1/4
0.15
15C02CH
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Delay Time Storage Time Turn-OFF Delay Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO tstg IC=10µA, IE=0 IC=1mA, RBE= IE=10µA, IC=0 specified Test Circuit. specified Test Circuit. specified Test Circuit. Conditions Ratings Unit
Switching Time Test Circuit
PW=20µs D.C.1% INPUT OUTPUT 220µF VBE= 470µF VCC=5V
IC=20IB1= -20IB2=400mA
1000
.0mA
1200
VCE=2V
5.0mA
Collector Current,
3.0mA
2.0mA 1.5mA
Collector Current,
1000
30.0
1.0mA
0.6mA 0.3mA IB=0
1000
IT05038
Collector-to-Emitter Voltage,
1000
IT05037 1000
Base-to-Emitter Voltage,
VCE(sat)
Ta=7 25°C -25°C
VCE=2V
IB=20
Ta=75°C
Collector-to-Emitter Saturation Voltage, VCE(sat)
Current Gain,
25°C
-25°C
-25°
Collector Current,
1000 IT05039
Collector Current,
1000 IT05042
No.7353-2/4
15C02CH
1000
VCE(sat)
IB=50
VBE(sat)
IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat)
Base-to-Emitter Saturation Voltage, VBE(sat)
-25°C
25°C
75°C
1000 IT05043
Collector Current,
Collector Current,
1000
1000 IT05044
f=1MHz
VCE=2V
Gain-Bandwidth Product,
Output Capacitance,
Collector-to-Base Voltage,
IT05041
Collector Current,
1000 IT05040
f=1MHz
Collector Dissipation,
Resistance,
Base Current,
IT06664
Ambient Temperature,
IT05047
No.7353-3/4
15C02CH
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information September 2003. Specifications information herein subject change without notice.
No.7353-4/4

15C02CH Epitaxial Planar Silicon Transistor 15C02CH Low

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