FP215 Epitaxial Planar Silicon Composite Transistors High-Fr

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FP215 Epitaxial Planar Silicon Composite Transistors High-Fr

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Ordering number:EN4698
FP215
Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp, Differential Applications
Features
Composite type with transistors contained package currently use, improving mounting efficiency greatly. FP215 formed with chips, being equivalent 2SA1724, placed package. Excellent thermal equilibrium pair capability. Electrical Connection
1:Base (PNP 2:Collector (PNP 3:Emitter Common 4:Collector (PNP 5:Base (PNP 6:Collector (PNP 7:Collector (PNP (Top view)
Package Dimensions
unit:mm 2108A
[FP215]
1:Base (PNP 2:Collector (PNP 3:Emitter Common 4:Collector (PNP 5:Base (PNP 6:Collector (PNP 7:Collector (PNP SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg
Mounted ceramic board unit Mounted ceramic board
Conditions
Ratings -300 -600 0.75 +150
Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Saturation Voltage Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 hFE1 (small-large) (large-small) VCE(sat) VBE(sat) VCB=-20V, IE=0 VEB=-2V, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-3000mA VCE=-5V, IC=-50mA VCE=-5V, IC=-100mA VCE=-5V, IC=-50mA VCB=-10V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA 0.93 -0.4 -0.9 -1.0 -1.2 Conditons Ratings -0.1 -1.0 Unit
Note:The specifications shown above individual transistor. However, Current Gain Ratio Base-to-Emitter Voltage Difference paired transistors. Marking:215
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3
FP215
No.4698-2/3
FP215
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information May, 1998. Specifications information herein subject change without notice.
No.4698-3/3

FP215 Epitaxial Planar Silicon Composite Transistors High-Fr

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