DS446 Silicon Epitaxial Planar Type Temperature Compensation

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DS446 Silicon Epitaxial Planar Type Temperature Compensation

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Ordering number:EN715D
DS446
Silicon Epitaxial Planar Type Temperature Compensation
Very High-Speed Switching Diode
Features
Glass sleeve structure. Power dissipation P=300mW max. Interterminal Capacitance C=3.0pF max. Reverse recovery time trr=4.0ns max.
Package Dimensions
unit:mm 1080
[DS446]
Specifications
Absolute Maximum Ratings 25°C
Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Symbol IFSM Tstg pulse Conditions
C:Cathode A:Anode
Ratings +175
Unit
Electrical Characteristics 25°C
Parameter Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Symbol IF=1.5mA VR=100V VR=0V, f=1MHz VR=6V, IF=10mA, RL=50 Conditions Ratings 0.55 0.65 Unit
Reverse Recovery Time Test Circuit
Unit (resistance:)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53098HA (KT)/D208TA, No.715-1/2
DS446
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information May, 1998. Specifications information herein subject change without notice.
No.715-2/2

DS446 Silicon Epitaxial Planar Type Temperature Compensation

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