PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2S

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PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2S

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Ordering number:ENN1018E
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB884/2SD1194
Driver Applications
Applications
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Package Dimensions
unit:mm 2010C
[2SB884/2SD1194]
10.2
Features
High current gain. High current capacity wide ASO. saturation voltage.
18.0
14.0
15.1
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg
Tc=25°C
2.55
2.55
Conditions
2SB884
Base Collector Emitter SANYO TO-220AB
Ratings (-)110 (-)100 (-)6 (-)3 (-)5 1.75 +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Symbol ICBO IEBO VCE(sat) VBE(sat) VCB=(-)80V, IE=0 VEB=(-)5V, IC=0 VCE=(-)3V, IC=(-)1.5A IC=(-)1.5A, IB=(-)3mA IC=(-)1.5A, IB=(-)3mA VCE=(-)5V, IC=(-)1.5A 1500 4000 (-1.0) (-)2.0 (-)1.5 Conditions Ratings (-)0.1 (-)3 Unit
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1002AS (KT)/91098HA (KT)/10996TS (KOTO) 8-4529/D251MH/4027KI/D222KI No.1018-1/4
2SB884/2SD1194
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO IC=(-)5mA, IE=0 V(BR)CEO IC=(-)50mA, RBE= tstg specified Test Circuit specified Test Circuit specified Test Circuit Conditions Ratings (-)110 (-)100 (0.8) (2.4) (1.2) Unit
Switching Time Test Circuit
PW=50µs, Duty Cycle1% 500IB1= -500IB2=IC=1A
INPUT 100µF VBB= 470µF VCC=50V
Electrical Connection
OUTPUT
2SB884
2SD1194
(For PNP, polarity reversed.)
-3.0
From -500µA -450µA -400µA -350µA -300µA 2SB884
2SD1194
450µA
400µA 350µA 300µA
-2.5
Collector Current,
-2.0
Collector Current,
500µA
-1.5
-1.0
-250µA -200µA
250µA
200µA
-0.5
-150µA
150µA
IB=0
ITR08578
IB=0
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
ITR08579
From -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA 2SB884
From 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 2SD1194
Collector Current,
Collector Current,
-1.0mA
1.0mA
IB=0
ITR08580
IB=0
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
ITR08581
No.1018-2/4
2SB884/2SD1194
2SB884 VCE= Collector Current,
2SD1194 VCE=3V
Collector Current,
-40°C
25°C
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 ITR08582
25°C
-40°C
ITR08583
Base-to-Emitter Voltage,
10000 1000 -100
Base-to-Emitter Voltage,
2SB884 VCE=
10000 1000
2SD1194 VCE=3V
Current Gain,
Current Gain,
-1000
1000
Collector Current,
ITR08584
Collector Current,
ITR08585
VCE(sat)
Collector-to-Emitter Saturation Voltage, (sat) 2SB884 IB=500
VCE(sat)
2SD1194 IB=500
Collector-to-Emitter Saturation Voltage, (sat)
-1.0 -100
25°C 120°C
-40°C
25°C 120°C
-40°C
-1000
1000
Collector Current,
ITR08586
Collector Current,
ITR08587
VBE(sat)
2SB884 IB=500
VBE(sat)
2SD1194 IB=500
Base-to-Emitter Saturation Voltage, (sat)
Base-to-Emitter Saturation Voltage, (sat)
-40°C
25°C
-40°C
25°C
120°C
-1.0 -100
120°C
Collector Current,
-1000
ITR08588
Collector Current,
1000
ITR08589
No.1018-3/4
2SB884/2SD1194
ICP=-5A IC=-3A
2SB884
Collector Current,
0.01
ICP=5A IC=3A
2SD1194
Collector Current,
-1.0 -0.1
-0.01
Tc=25°C 100ms single pulse
Tc=25°C 100ms single pulse
Collector-to-Emitter Voltage,
-100 ITR08590
Collector-to-Emitter Voltage,
ITR08591
2SD884 2SD1194
Collector Dissipation,
Case Temperature,
ITR08592
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information December, 2002. Specifications information herein subject change without notice.
No.1018-4/4

PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2S

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