RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Part Number Rad

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Part Number Rad

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90882E
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Part Number Radiation Level IRHF9130 100K Rads (Si) IRHF93130 300K Rads (Si) RDS(on) 0.30 0.30 -6.5A -6.5A
IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630
RAD-Hard HEXFET TECHNOLOGY
Part Number JANSR2N7389 JANSF2N7389
International Rectifier's RAD-Hard HEXFETtechnology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rds(on) gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
TO-39
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
-12V, 25°C -12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page -6.5 -4.1 -6.5
Pre-Irradiation
Units
W/°C
V/ns
0.063 (1.6mm) from case 10s) 0.98 (typical)
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1/15/02
IRHF9130
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter Units
V/°C
Test Conditions
=-1.0mA Reference 25°C, -1.0mA -12V, -4.1A -12V, -6.5A VGS, -1.0mA >-15V, -4.1A VDS= -80V ,VGS=0V -80V, 125°C -20V =-12V, -6.5A -50V -50V, -6.5A, =-12V,
BVDSS Drain-to-Source Breakdown Voltage -100 DSS/T Temperature Coefficient Breakdown -0.112 Voltage RDS(on) Static Drain-to-Source On-State 0.30 Resistance 0.35 VGS(th) Gate Threshold Voltage -2.0 -4.0 Forward Transconductance IDSS Zero Gate Voltage Drain Current -250 IGSS IGSS td(on) td(off) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -100
Measured from drain lead (6mm/0.25in. from package) source lead (6mm/0.25in. from package)
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1200
-25V 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-6.5 -3.0 0.74
Test Conditions
25°C, -6.5A, 25°C, -6.5A, di/dt -100A/µs -50V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHF9130
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage
100K Rads(Si)1 300K Rads (Si)2
Units
Test Conditions
-1.0mA VDS, -1.0mA -20V VDS=-80V, -12V, =-4.1A -12V, =-4.1A -6.5A
-100 -2.0
-4.0 -100 0.30 0.30 -3.0
-100 -2.0
-5.0 -100 0.30 0.30 -3.0
Part number IRHF9130 (JANSR2N7389) Part number IRHF93130 (JANSF2N7389)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area
36.8 59.9 Energy (MeV) Range (µm) @VGS=0V 32.8 -100 -100 @VGS=5V -100 -100 S(V) @VGS=10V -100 @VGS=15V @VGS=20V
-120 -100
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHF9130
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
-5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
-6.5A
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
-VGS Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Vs.Temperature
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Pre-Irradiation
IRHF9130
2000
-VGS Gate-to-Source Voltage
Capacitance (pF)
1500
Ciss Crss Coss 1MHz SHORTED
-6.5
Ciss
=-80V =-50V =-20V
1000
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED
DS(on)
Drain Current
100us
Single Pulse
10ms
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHF9130
Pre-Irradiation
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current CaseTemperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: Duty factor Peak thJC 0.01
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHF9130
Single Pulse Avalanche Energy (mJ)
-20V
-2.9A -4.1A BOTTOM -6.5A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-12V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRHF9130
Pre-Irradiation
Pulse width Duty Cycle Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. -25V, starting 25°C, L=7.8mH Peak -6.5A, =-12V -6.5A, di/dt -430A/µs, -100V, 150°C
Case Outline Dimensions TO-205AF(Modified TO-39)
LEGEND SOURCE GATE DRAIN
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 01/02
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Part Number Rad

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