IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Electrically Isol

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IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Electrically Isol

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-90928A
IRGVH50F
INSULATED GATE BIPOLAR TRANSISTOR
Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation High operating frequency Switching-loss rating includes "tail" losses
Fast Speed IGBT
VCES 1200V
VCE(on) 2.9V
@VGE 15V,
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while same time having simpler gate-drive requirements familiar power MOSFET. They provide substantial benefits host high-voltage, high-current applications. performance various IGBTs varies greatly with frequency. Note that provides designer with speed benchmark (fIc/2, "half-current frequency well indication current handling capability device.
TO-258AA
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Lead Temperature Weight
Max.
1200 (0.063in./1.6mm from case 10s) 10.5 (typical)
Units
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Units
0.625 0.21
°C/W
Test Conditions
footnotes refer last page
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02/20/02
IRGVH50F
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 Emitter-to-Collector Breakdown Voltage VCE(ON) Collector-to-Emitter Saturation Voltage Fig.2, 125°C VGE(th) Gate Threshold Voltage VGE, VGE(th)/TJ Temperature Coeff. Threshold Voltage mV/°C VGE, Forward Transconductance 100V, 960V ICES Zero Gate Voltage Collector Current 1200 960V, 125°C IGES Gate-to-Emitter Leakage Current ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) LC+LE Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. Max. Units Conditions 400V Fig. 25A, 400V 15V, 2.35 Energy losses include "tail" Fig. 125°C 25A, 400V 15V, 2.35 Energy losses include "tail" Fig. Measured from Collector lead (6mm/ 0.25in. from package) Emitter lead (6mm 0.25in. from package) 2400 Fig. 1.0MHz Typ.
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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IRGVH50F
Fig. Typical Load Current Frequency
(For square wave, I=IRMS fundamental; triangular wave, I=IPK)
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRGVH50F
Fig. Maximum Collector Current Case Temperature
Fig. Collector-to-Emitter Voltage Junction Temperature
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGVH50F
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRGVH50F
125°C
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
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IRGVH50F
960V 960V IC@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Driver same type D.U.T., 960V
Fig. Switching Loss
Test Circuit
Fig. Switching Loss
Waveforms
t=5µ
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IRGVH50F
Notes:
Repetitive rating; 20V, pulse width limited
max. junction temperature.
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. Equipment limitation.
80%(VCES), 20V, 10µH,
Case Outline Dimensions TO-258AA
4.19 [.165] 3.93 [.155] 17.65 [.695] 17.39 [.685] 6.85 [.270] 6.09 [.240]
0.12 [.005] 1.14 [.045] 0.88 [.035]
26.59 [1.047] 25.33 .997]
17.95 [.707] 17.70 [.697]
21.20 [.835] 20.70 [.815]
13.97 [.550] 13.46 [.530]
3.68 [.145] 3.18 [.125]
8.63 [.340] 7.62 [.300]
1.65 [.065] 1.39 [.055] 3.68 [.145] 3.43 [.135] 14.22 [.560] 11.43 [.450]
5.08 [.200]
0.50 [.020] 0.25 [.010]
DIMENS IONING OLERANCING Y14.5M-1994. DIMENS IONS HOWN MILLIMET [INCHES CONT ROLLING DIMENS ION: INCH. CONF ORMS JEDEC LINE O-258AA EFORE LEADFORMING.
LEGEND COLLECTOR EMITTER GATE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/02
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IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Electrically Isol

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