IRGMIC50U INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE

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IRGMIC50U INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE

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-90813A
IRGMIC50U
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation Switching-loss rating includes "tail" losses
Ultra Fast Speed IGBT
VCES 600V
VCE(on) 3.0V
@VGE 15V,
Description
n-ch
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while same time having simpler gate-drive requirements familiar power MOSFET. They provide substantial benefits host high-voltage, high-current applications. performance various IGBTs varies greatly with frequency. Note that provides designer with speed benchmark (fIc/2, "half-current frequency well indication current handling capability device.
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Lead Temperature Weight
TO-259AA
Max.
(0.063in./1.6mm from case 10s) 10.5 (typical)
Units
*Current limited diameter
Thermal Resistance
Parameter
RthJC RthJC RthCS RthJA Junction-to-Case-IGBT Junction-to-Case-Diode Case-to-Sink Junction-to-Ambient
Units
0.21 0.625
°C/W
Test Conditions
footnotes refer last page
www.irf.com
02/20/02
IRGMIC50U
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. Breakdown Voltage V/°C VCE(ON) Collector-to-Emitter Saturation Voltage 3.25 Fig. 2.85 125°C VGE(th) Gate Threshold Voltage VGE, VGE(th)/TJ Temperature Coeff. Threshold Voltage mV/°C VGE, Forward Transconductance 100V, 480V ICES Zero Gate Voltage Collector Current 5000 480V, 125°C IGES Gate-to-Emitter Leakage Current ±100 Diode Forward Voltage Drop 125°C
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) LC+LE Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. Typ. 0.12 Max. Units Conditions 300V Fig. 27A, 480V 15V, 2.35 Energy losses include "tail" Fig. 125°C 27A, 480V 15V, 2.35 Energy losses include "tail" Fig. Measured from Collector lead (6mm/ 0.25in. from package) Emitter lead (6mm 0.25in. from package) Fig. 1.0MHz di/dt 200A/µS, 200V di/dt 200A/µS, 125°C, 200V
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Peak Reverse Recovery Time Diode Peak Reverse Recovery Charge
2900
Note: Corresponding Spice Saber models available Website. footnotes refer last page
www.irf.com

IRGMIC50U INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE

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