IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR Electrically Isol

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IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR Electrically Isol

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-90715B
IRGMC30U
INSULATED GATE BIPOLAR TRANSISTOR
Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation Switching-loss rating includes "tail" losses
Ultra Fast Speed IGBT
VCES 600V
VCE(on) 3.0V
@VGE 15V, 8.0A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while same time having simpler gate-drive requirements familiar power MOSFET. They provide substantial benefits host high-voltage, high-current applications. performance various IGBTs varies greatly with frequency. Note that provides designer with speed benchmark (fIc/2, "half-current frequency well indication current handling capability device.
TO-254AA
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Lead Temperature Weight
Max.
(0.063in./1.6mm from case 10s) (typical)
Units
Thermal Resistance
Parameter
thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Units
1.67 0.21
°C/W
Test Conditions
footnotes refer last page
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02/20/02
IRGMC30U
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage V(BR)CES/TJ Temperature Coeff. Breakdown Voltage 0.63 VCE(ON) Collector-to-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage VGE(th)/TJ Temperature Coeff. Threshold Voltage Forward Transconductance ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V/°C 8.0A Fig.5 8.0A 125°C VGE, mV/°C VGE, 15V, 8.0A 480V 1000 480V, 125°C ±500 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) LC+LE Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. Typ. 0.18 0.41 0.59 Max. Units Conditions 8.0A 300V Fig. 8.0A, 480V 15V, Energy losses include "tail" Fig. 125°C 8.0A, 480V 15V, Energy losses include "tail" Fig. Measured from Collector lead (6mm/ 0.25in. from package) Emitter lead (6mm 0.25in. from package) Fig. 1.0MHz
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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IRGMC30U
Fig. Typical Load Current Frequency
(For square wave, I=IRMS fundamental; triangular wave, I=IPK)
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRGMC30U
Fig. Maximum Collector Current Case Temperature
Fig. Collector-to-Emitter Voltage Junction Temperature
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGMC30U
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRGMC30U
125°C
Fig. Typical Switching Losses Collector-to-Emitter Current
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IRGMC30U
480V 480V IC@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Driver same type D.U.T., 480V
Fig. Switching Loss
Test Circuit
Fig. Switching Loss
Waveforms
t=5µ
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IRGMC30U
Notes:
Repetitive rating; 20V, pulse width limited
max. junction temperature.
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
80%(VCES), 20V, 10µH,
Case Outline Dimensions TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
3.78 [.149] 3.53 [.139] 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005]
17.40 [.685] 16.89 [.665]
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665]
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
1.52 [.060]
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
4.82 [.190] 3.81 [.150] 3.81 [.150]
4.06 [.160] 3.56 [.140] 1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150]
1.14 [.045] 0.89 [.035] 0.36 [.014]
3.81 [.150]
NOTE DIMENS IONING TOLE RANCING Y14.5M-1994. DIMENS IONS HOWN MILLIMETE [INCHE CONT ROLLING DIMENS ION: INCH. CONF ORMS JEDEC OUTLINE O-254AA. LEGEND COLLECTOR EMITTER GATE
CAUTION BERYLLIA WARNING MIL-PRF-19500 Packages containing beryllia shall ground, sandblasted, machined have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/02
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IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR Electrically Isol

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