1000V Ultrafast Diodes MUR8100E RUR8100 ultrafast diodes (trr 75n

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1000V Ultrafast Diodes MUR8100E RUR8100 ultrafast diodes (trr 75n

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MUR8100E, RURP8100
1000V Ultrafast Diodes
MUR8100E RUR8100 ultrafast diodes (trr 75ns) with soft recovery characteristics. They have forward voltage drop planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices intended energy steering/ clamping diodes rectifiers variety switching power supplies other power switching applications. Their stored charge ultrafast recovery with soft recovery characteristics minimize ringing electrical noise many power switching circuits, thus reducing power loss switching transistor. Formerly developmental type TA09617.
Features
Ultrafast with Soft Recovery <75ns Operating Temperature. .175oC Reverse Voltage .1000V Avalanche Energy Rated Planar Construction
Applications
Switching Power Supply Power Switching Circuits General Purpose
Ordering Information
PART NUMBER MUR8100E RURP8100 PACKAGE TO-220AC TO-220AC BRAND MUR8100 RURP8100
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, entire part number.
Symbol
Absolute Maximum Ratings
25oC, Unless Otherwise Specified MUR8100E RURP8100 UNITS
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Blocking Voltage Average Rectified Forward Current IF(AV) 155oC) Repetitive Peak Surge Current IFRM (Square Wave 20kHz) Nonrepetitive Peak Surge Current IFSM (Halfwave Phase 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures EAVL Operating Storage Temperature .TSTG,
1000 1000 1000
1-888-INTERSIL 321-724-7143 Copyright
Intersil Corporation 2000
MUR8100E, RURP8100
Electrical Specifications
SYMBOL 150oC 1000V 1000V, 150oC dIF/dt 200A/µs DEFINITIONS Instantaneous forward voltage 300µs, 2%). Instantaneous reverse current. Reverse recovery time dIF/dt 100A/µs (See Figure summation Time reach peak reverse current dIF/dt 100A/µs (See Figure Time from peak projected zero crossing based straight line from peak through (See Figure Reverse recovery charge. Junction Capacitance. Thermal resistance junction case. Pulse width. Duty cycle. dIF/dt 200A/µs dIF/dt 200A/µs dIF/dt 200A/µs 10V, 25oC, Unless Otherwise Specified. TEST CONDITION UNITS
oC/W
Typical Performance Curves
REVERSE CURRENT (µA) 175oC
FORWARD CURRENT
175oC
100oC
25oC
100oC
25oC
0.01
0.001 1000 FORWARD VOLTAGE REVERSE VOLTAGE
FIGURE FORWARD CURRENT FORWARD VOLTAGE
FIGURE REVERSE CURRENT REVERSE VOLTAGE
MUR8100E, RURP8100 Typical Performance Curves
(Continued)
25oC, dIF/dt 200A/µs RECOVERY TIMES (ns) RECOVERY TIMES (ns)
100oC, dIF/dt 200A/µs
FORWARD CURRENT
FORWARD CURRENT
FIGURE trr, CURVES FORWARD CURRENT
FIGURE trr, CURVES FORWARD CURRENT
IF(AV) AVERAGE FORWARD CURRENT
175oC, dIF/dt 200A/µs RECOVERY TIMES (ns)
WAVE
FORWARD CURRENT
CASE TEMPERATURE (oC)
FIGURE trr, CURVES FORWARD CURRENT
FIGURE CURRENT DERATING CURVE
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE
FIGURE JUNCTION CAPACITANCE REVERSE VOLTAGE
MUR8100E, RURP8100 Test Circuits Waveforms
AMPLITUDE CONTROL dIF/dt CONTROL
CURRENT SENSE
IGBT
0.25
FIGURE TEST CIRCUIT
40mH EAVL 1/2LI2 [VR(AVL) /(VR(AVL) VDD)] IGBT (BVCES VR(AVL)) CURRENT SENSE
FIGURE WAVEFORMS DEFINITIONS
VAVL
FIGURE AVALANCHE ENERGY TEST CIRCUIT
FIGURE AVALANCHE CURRENT VOLTAGE WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
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1000V Ultrafast Diodes MUR8100E RUR8100 ultrafast diodes (trr 75n

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