IRG4PH50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
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91575B
IRG4PH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
High short circuit rating optimized motor control, =10µs, 720V 125°C, Combines conduction losses with high switching speed Tighter parameter distribution higher efficiency than previous generations IGBT co-packaged with HEXFREDultrafast, ultrasoft recovery antiparallel diodes
Short Circuit Rated UltraFast IGBT
VCES 1200V
VCE(on) typ. 2.77V
@VGE 15V,
n-ch
Benefits
Latest generation IGBT's offer highest power density motor controls possible HEXFREDdiodes optimized performance with IGBTs. Minimized recovery characteristics reduce noise, switching losses This part replaces IRGPH50KD2 IRGPH50MD2 products hints design 97003
TO-247AC
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
Max.
1200 +150 (0.063 (1.6mm) from case) (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.24 (0.21)
Max.
0.64 0.83
Units
°C/W
(oz)
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7/7/2000
IRG4PH50KD
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 Temperature Coeff. Breakdown Voltage 0.91 Collector-to-Emitter Saturation Voltage 2.77 3.28 2.54 Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Max. Units Conditions 250µA V/°C 1.0mA Fig. 24A, 150°C 250µA mV/°C 250µA 100V, 1200V 6500 1200V, 150°C Fig. 16A, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 3.83 1.90 5.73 8.36 2800 Max. Units Conditions 400V Fig.8 25°C 24A, 800V 15V, Energy losses include "tail" diode reverse recovery Fig. 9,10,18 720V, 125°C 15V, 150°C, Fig. 10,11,18 24A, 800V 15V, 5.0, Energy losses include "tail" diode reverse recovery Measured from package Fig. 1.0MHz 25°C Fig. 125°C 25°C Fig. 125°C 200V 25°C Fig. 1838 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C
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IRG4PH50KD
LOAD CURRENT
sink ifie
rate volta
Frequency (KHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to-Emitter Current
Collector-to-Emitter Current
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4PH50KD
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PH50KD
4000
Gate-to-Emitter Voltage
Capacitance (pF)
3000
1MHz Cies SHORTED Cres Coes
400V
Cies
2000
1000
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
800V 960V
800V 960V
Gate Resistance Gate Resistance (Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4PH50KD
Total Switching Losses (mJ)
Collector Current
800V 960V
1000
SAFE OPERATING AREA
1000 10000
Collector Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector Current
1000
Fig. Turn-Off
Instantaneous Forward Current
150°C
125°C 25°C
orward oltage
Fig. Typical Forward Voltage Drop Instantaneous Forward Current
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IRG4PH50KD
200V 125°C 25°C
125°C 25°C
(ns)
1000
1000
Fig. Typical Reverse Recovery dif/dt
1200
Fig. Typical Recovery Current dif/dt
1000
125°C 25°C
200V 125°C 25°C
i(rec
1000
1000
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt
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IRG4PH50KD
+Vge
Same device .U.T.
430µF
Fig. Test Circuit Measurement ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
icdt
LTAG
OVERY ENER
Vcicdt
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4PH50KD
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 100V
D.U.T.
480V
960V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
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IRG4PH50KD
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure VCC=80%(VCES), VGE=20V, L=10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Case Outline TO-247AC
NOTE
LEAD 1234-
COLLECTO COLLECTO
EDEC 47AC -3P)
illim
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