IRG4PC50S-P INSULATED GATE BIPOLAR TRANSISTOR Standard: Opti
|
|
|
Top Searches for this datasheet
91581B
IRG4PC50S-P
INSULATED GATE BIPOLAR TRANSISTOR
Standard: Optimized minimum saturation voltage operating frequencies 1kHz) Generation IGBT design provides tighter parameter distribution higher efficiency than Generation Industry standard TO-247AC package Surface Mountable
Standard Speed IGBT
VCES 600V
VCE(on) typ. 1.28V
@VGE 15V,
n-channel
Benefits
Generation IGBT's offer highest efficiency available IGBT's optimized specified application conditions Designed "drop-in" replacement equivalent industry-standard Generation IGBT's
Surface Mountable TO-247
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Reflow Temperature
Max.
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount
Typ.
0.24
Max.
0.64
Units
°C/W
www.irf.com
05/14/02
IRG4PC50S-P
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON) VGE(th) VGE(th)/TJ ICES
IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. Breakdown Voltage 0.75 1.28 Collector-to-Emitter Saturation Voltage 1.62 1.28 Gate Threshold Voltage Temperature Coeff. Threshold Voltage -9.3 Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Max. Units Conditions 250µA 1.0A V/°C 1.0mA 1.36 Fig.2, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 600V 10V, 25°C 1000 600V, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.72 8.27 8.99 1080 4100 Max. Units Conditions 400V Fig. 25°C 41A, 480V 15V, Energy losses include "tail" Fig. 150°C, 41A, 480V 15V, Energy losses include "tail" Fig. Measured from package Fig. 1.0MHz
Repetitive rating; 20V, pulse width limited
max. junction temperature. fig.
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
80%(VCES), 20V, 10µH, 5.0,
(See fig. 13a)
Repetitive rating; pulse width limited maximum
junction temperature.
www.irf.com
IRG4PC50S-P
125° 90°C drive ified
Load Current
Frequency (kHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
1000
1000
Collector-to-Emitter Current
Collector-to-Emitter Current
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
www.irf.com
IRG4PC50S-P
Collector-to-Emitter Voltage(V)
axim ollector urrent
PULSE WIDTH
=20.5
perature (°C)
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRG4PC50S-P
8000
Gate-to-Emitter Voltage
Capacitance (pF)
6000
1MHz Cies SHORTED Cres Coes
400V
Cies
4000
2000
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
10.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V
480V
20.5
Gate Resistance Gate Resistance (Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
www.irf.com
IRG4PC50S-P
Collector-to-Emitter Current
Total Switching Losses (mJ)
480V
1000
SAFE OPERATING AREA
1000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
www.irf.com
IRG4PC50S-P
480V
480V C@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Driver same type D.U.T., 480V
Fig. Switching Loss
Test Circuit
Fig. Switching Loss
Waveforms
t=5µ
www.irf.com
IRG4PC50S-P
TO-247AC Package Outline
Dimensions shown millimeters (inches)
0.25 (.80 (.77 -C14
(.08 (.05
SION CING Y14.5M, 1982. OLLIN TLIN O-247-A
5.45 (.21
(.13 (.11
(.03 (.01
TO-247AC Part Marking Information
3A1Q
LOGO
3A1Q 9302
CODE
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.05/02
www.irf.com
Other recent searches
PBC36SGAN - PBC36SGAN PBC36SGAN Datasheet
MT8940 - MT8940 MT8940 Datasheet
MR100 - MR100 MR100 Datasheet
HR-5W - HR-5W HR-5W Datasheet
CY7C344 - CY7C344 CY7C344 Datasheet
ACRO-400-4750 - ACRO-400-4750 ACRO-400-4750 Datasheet
2SK2995 - 2SK2995 2SK2995 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
