INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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94255
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Extremely voltage drop 1.1Vtyp. S-Series: Minimizes power dissipation frequency inverter drives, brushless drives. Very Tight Vce(on) distribution IGBT co-packaged with HEXFREDultrafast, ultra-soft-recovery anti-parallel diodes bridge configurations Industry standard D2Pak TO-262 packages
IRG4BC10SD-S IRG4BC10SD-L
Standard Speed CoPack IGBT
VCES 600V
VCE(on) typ. 1.10V
@VGE 15V, 2.0A
n-ch
Benefits
Generation IGBT's offer highest efficiencies available IGBT's optimized specific application conditions HEXFRED diodes optimized performance with IGBT's Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET's conduction Diode losses
D2Pak IRG4BC10SD-S Max.
+150
TO-262 IRG4BC10SD-L Units
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec.
(0.063 (1.6mm) from case)
Thermal Resistance
Parameter
Min.
Typ.
0.50 2.0(0.07)
Max.
Units
°C/W
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state)V Weight
(oz)
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06/12/01
IRG4BC10SD-S/L
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS Temperature Coeff. Breakdown Voltage 0.64 Collector-to-Emitter Saturation Voltage 1.58 2.05 1.68 Gate Threshold Voltage Temperature Coeff. Threshold Voltage -9.5 Forward TransconductanceT 3.65 5.48 Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Max. Units Conditions 250µA V/°C 1.0mA 8.0A 14.0A Fig. 8.0A, 150°C 250µA mV/°C 250µA 100V, =8.0A 600V 1000 600V, 150°C =4.0A Fig. =4.0A, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
Parameter td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. Max. Units 2.42 6.53 1200 1080 0.31 3.28 3.60 10.9 1.46 3.83 Conditions 8.0A 400V Fig. 25°C 8.0A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 5.0A 150°C, Fig. 10,11, 8.0A, 480V 15V, Energy losses include "tail" diode reverse recovery. Measured from package Fig. 1.0MHz 25°C Fig. =4.0A 125°C 25°C Fig. 125°C 200V 25°C Fig. di/dt 200A/µs 125°C 25°C Fig. 125°C
A/µs
Details note through last page
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IRG4BC10SD-S/L
10.0 Duty cycle 125°C Tsink 90°C 55°C Gate drive specified Turn-on losses include effects reverse recovery Power Dissipation 9.2W Heatsink Mount Power Dissipation 1.8W typical socket Mount
Load Current
rated voltage
Ideal diodes
Frequency
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
Collector-to-Emitter Current
Collector Current
PULSE WIDTH
PULSE WIDTH
80µs PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4BC10SD-S/L
3.00
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
2.50
2.00
1.50
1.00
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4BC10SD-S/L
Capacitance (pF)
Cies
Gate-to-Emitter Voltage
1MHz Cies SHORTED Cres Coes
400V
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
3.60
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V 3.55
3.50
=100 480V
3.45
3.40
3.35
3.30
Gate Resistance (Ohm) Gate Resistance
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4BC10SD-S/L
Total Switching Losses (mJ)
Collector Current
480V
SAFE OPERATING AREA
1000
Collector Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector Current
Fig. Turn-Off
Instantaneous Forward Current
150°C 125°C 25°C
orward Voltage Drop Forward oltage
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
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IRG4BC10SD-S/L
8.0A 4.0A
8.0A
4.0A
trr- (nC)
Irr-
1000
(A/µ
1000
(A/µ
Fig. Typical Reverse Recovery dif/dt
25°C
Fig. Typical Recovery Current dif/dt
1000
8.0A
8.0A
(rec) M/dt- /µs)
4.0A
4.0A
Qrr- (nC)
(A/µ
1000
1000
(A/µ
Fig. Typical Stored Charge dif/dt
Fig. Typical di(rec)M/dt dif/dt,
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IRG4BC10SD-S/L
Same device .U.T.
430µF
d(off)
Fig. Test Circuit Measurement
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
d(on)
(Eon +Eoff
t=5µs Eoff
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
LTAG
ieIc OVERY ENER
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4BC10SD-S/L
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 100V
D.U.T.
480V
480V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
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IRG4BC10SD-S/L
D2Pak Package Outline
0.54 (.415 0.29 (.405 (.055
(.18 (.16
-B1.3 (.05 (.04
6.47 6.18 5.49 4.73 5.28 4.78 (.110 (.090 2.61 2.32
(.07 (.05
1.40 1.14 (.20
0.25
0.55 0.46
1.43
FTER 4.5M ATSINK
(.35 (.70
3.81 (.08 (.100
D2Pak Part Marking Information
PART F530S
DATE CODE
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IRG4BC10SD-S/L
TO-262 Package Outline
TO-262 Part Marking Information
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IRG4BC10SD-S/L
D2Pak Tape Reel Information
(.16 (.15
1.60 (.06 1.50 (.05 (.01 (.01
1.60 (.457 1.40 (.449
5.42 (.60 5.22 (.60
4.30 3.90
10.90 (.42 10.70 (.42 1.75 1.25 6.10 5.90 4.72 4.52
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
0.00 (14.173)
60.00 (2.36
EIA-418. LLIN ILLIM ENSIO ISTO
26.40 (1.0 24.40 (.96
30.40 (1.197)
Notes:
Repetitive rating: VGE=20V; pulse width limited maximum junction temperature (figure RVCC=80%(VCES), VGE=20V, L=10µH, 100W (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. This only applies TO-262 package. This applies D2Pak, when mounted square FR-4 G-10 Material
recommended footprint soldering techniques refer application note #AN-994.
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.06/01
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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