IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast: Optim

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IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast: Optim

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91574B
IRG4PH50U
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast: Optimized high operating frequencies hard switching, >200 resonant mode IGBT design provides tighter parameter distribution higher efficiency than previous generations Optimized power conversion; SMPS, welding Industry standard TO-247AC package
Ultra Fast Speed IGBT
VCES 1200V
VCE(on) typ. 2.78V
@VGE 15V,
n-channel
Benefits
Higher switching frequency capability than competitive IGBTs Highest efficiency available Much lower conduction losses than MOSFETs More efficient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 screw.
Max.
1200 (0.063 (1.6mm) from case
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.24 (0.21)
Max.
0.64
Units
°C/W (oz)
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01/14/02
IRG4PH50U
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 250µA Emitter-to-Collector Breakdown Voltage 1.0A Temperature Coeff. Breakdown Voltage 1.20 V/°C 1.0mA 2.56 2.78 Collector-to-Emitter Saturation Voltage Fig.2, 3.20 2.54 150°C Gate Threshold Voltage VGE, 250µA Temperature Coeff. Threshold Voltage mV/°C VGE, 250µA Forward Transconductance 100V, 1200V Zero Gate Voltage Collector Current 24V, 25°C 5000 1200V, 150°C Gate-to-Emitter Leakage Current ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Eoff Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.53 1.41 1.94 5.40 0.35 1.43 1.78 4.56 3600 Max. Units Conditions 400V Fig. 25°C 24A, 960V 15V, Energy losses include "tail" Fig. 150°C 24A, 960V 15V, Energy losses include "tail" Fig. 25°C, 15V, 20A, 960V Energy losses include "tail" Fig. 150°C Measured from package Fig. 1.0MHz
Notes: Repetitive rating; 20V, pulse width limited max. junction temperature. fig. 80%(VCES), 20V, 10µH, 5.0, (See fig. 13a)
Repetitive rating; pulse width limited maximum
junction temperature.
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
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IRG4PH50U
Tria ngula
driv ifie
Load Current
issipa rate volta
olta
Frequency (kHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
1000
1000
Collector-to-Emitter Current
Collector-to-Emitter Current
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4PH50U
Collector-to-Emitter Voltage(V)
PULSE WIDTH
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PH50U
7000
Gate-to-Emitter Voltage
6000
1MHz Cies SHORTED Cres Coes
400V
Capacitance (pF)
5000
Cies
4000
3000
2000
1000
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
960V 25°C
Total Switching Losses (mJ)
Total Switching Losses (mJ)
960V
Gate Resistance
Junction Temperature (°C)
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4PH50U
150°C 960V 1000
Collector-to-Emitter Current
Total Switching Losses (mJ)
SAFE OPERATING AREA
1000 10000
Collector Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
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IRG4PH50U
960V
960V IC@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Driver same type D.U.T., 960V
Fig. Switching Loss
Test Circuit
Fig. Switching Loss
Waveforms
t=5µ
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IRG4PH50U
Case Outline Dimensions TO-247AC
LEAD 1234-
GATE COLLE COLLE
CONFORMS JEDEC OUTLINE TO-247AC (TO-3P)
illim
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 JAPAN: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 01/02
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IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast: Optim

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