INSULATED GATE BIPOLAR TRANSISTOR (on) Punch Through IGBT Technol
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94575
INSULATED GATE BIPOLAR TRANSISTOR
(on) Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive (on) Temperature Coefficient.
IRGB6B60K IRGS6B60K IRGSL6B60K
VCES 600V 7.0A, TC=100°C
10µs, TJ=150°C
Benefits
Benchmark Efficiency Motor Control. Rugged Transient Performance. EMI. Excellent Current Sharing Parallel Operation.
n-channel
VCE(on) typ. 1.8V
TO-220AB IRGB6B60K
D2Pak IRGS6B60K
TO-262 IRGSL6B60K
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec.
Max.
+150 (0.063 (1.6mm) from case)
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min.
Typ.
0.50 1.44
Max.
Units
°C/W
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IRG/B/S/SL6B60K
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on) VGE(th)
VGE(th)/TJ
ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage Collector-to-Emitter Saturation Voltage 1.80 2.20 Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Max. Units Conditions 500µA V/°C 1.0mA, (25°C-150°C) 2.20 5.0A, 2.50 5.0A,VGE 15V, 150°C VGE, 250µA mV/°C VGE, 1.0mA, (25°C-150°C) 50V, 5.0A, PW=80µs 600V 600V, 150°C ±100 ±20V
Ref.Fig.
8,9,10 8,9,10
Switching Characteristics 25°C (unless otherwise specified)
Eoff Etot td(on) td(off) Eoff Etot td(on) td(off) Cies Coes Cres RBSOA SCSOA Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Min. Max. Units Conditions 5.0A 400V 5.0A, 400V 15V,R 100, =1.4mH 150nH 25°C 5.0A, 400V 15V, =1.4mH 150nH, 25°C 5.0A, 400V 15V,R 100, =1.4mH 150nH 150°C 5.0A, 400V 15V, =1.4mH 150nH, 150°C 1.0MHz 150°C, 26A, =600V FULL SQUARE 500V, =+15V 0V,RG 150°C, =600V, 360V, +15V Typ. 18.2 13.2
Ref.Fig.
12,14
WF1WF2
Note page
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IRG/B/S/SL6B60K
Ptot
(°C)
(°C)
Fig. Maximum Collector Current Case Temperature
Fig. Power Dissipation Case Temperature
1000 10000
1000
Fig. Forward 25°C; 150°C
Fig. Reverse Bias 150°C; =15V
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IRG/B/S/SL6B60K
8.0V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 80µs
Fig. Typ. IGBT Output Characteristics 25°C; 80µs
8.0V
Fig. Typ. IGBT Output Characteristics 150°C; 80µs
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IRG/B/S/SL6B60K
3.0A 5.0A 3.0A 5.0A
Fig. Typical -40°C
Fig. Typical 25°C
3.0A 5.0A
25°C 150°C
150°C 25°C
Fig. Typical 150°C
Fig. Typ. Transfer Characteristics 50V; 10µs
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IRG/B/S/SL6B60K
Energy (µJ)
1000
tdOFF
Swiching Time (ns)
EOFF
tdON
Fig. Typ. Energy Loss 150°C; L=1.4mH; VCE= 400V 100; VGE=
Fig. Typ. Switching Time 150°C; L=1.4mH; VCE= 400V 100; VGE=
1000
EOFF
Swiching Time (ns)
tdOFF
Energy (µJ)
tdON
Fig. Typ. Energy Loss 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE=
Fig. Typ. Switching Time 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE=
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IRG/B/S/SL6B60K
1000
Cies
300V 400V
Capacitance (pF)
Coes
Cres
Total Gate Charge (nC)
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 5.0A; 600µH
Thermal Response thJC
0.50 0.20 0.10 0.05 0.01 0.02
(°C/W) (sec) 0.708 0.00022 0.447 0.219 0.00089 0.01037
i/Ri i/Ri
0.01
SINGLE PULSE THERMAL RESPONSE
Notes: Duty Factor t1/t2 Peak Zthjc
1E-4 1E-3 1E-2 1E-1
0.001 1E-6 1E-5
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRG/B/S/SL6B60K
480V
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
diode clamp
Driver
360V
DRIVER
Fig.C.T.3 S.C.SOA Circuit
Fig.C.T.4 Switching Loss Circuit
Fig.C.T.5 Resistive Load Circuit
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IRG/B/S/SL6B60K
TEST CURRENT
-0.20
Loss
test current
test current
Loss
0.80
0.30 time(µs)
-100 16.00
16.10
16.20 time (µs)
16.30
16.40
Fig. WF1- Typ. Turn-off Loss Waveform 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform 150°C using Fig. CT.4
-5.00
0.00
5.00 time (µS)
10.00
15.00
Fig. WF3- Typ. Waveform 150°C using Fig. CT.3
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IRG/B/S/SL6B60K
TO-220AB Package Outline
Dimensions shown millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
HEXFET
LEAD ASSIGNMENTS IGBTs, CoPACK
1.15 (.045)
LEAD GATE GATE ASSIGNMENTS DRAIN GATE COLLECTOR 323- SOURCEDRAIN EMITTER COLLECTOR DRAIN SOURCE DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
1.40 (.055) 1.15 (.045) 2.54 (.100) NOTES:
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: IRF1010 CODE 1789 EMBLED 1997 EMBLY LINE INTERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
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IRG/B/S/SL6B60K
D2Pak Package Outline
D2Pak Part Marking Information
THIS IRF530S WITH CODE 8024 EMBLED 2000 SEMBLY LINE INTERNATIONAL RECTIFIER LOGO EMBLY CODE PART NUMBER F530S CODE YEAR 2000 WEEK LINE
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IRG/B/S/SL6B60K
TO-262 Package Outline
IGBT GATE COLLECTOR EMITTER COLLECTOR
TO-262 Part Marking Information
EXAMPLE: IRL3103L CODE 1789 EMBLED 1997 EMBLY LINE ERNATIONAL RECTIFIER LOGO SEMBLY CODE PART NUMBER
DATE CODE YEAR 1997 WEEK LINE
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IRG/B/S/SL6B60K
D2Pak Tape Reel Information
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES COMFORMS EIA-418. CONTROLLING DIMENSION: MILLIMETER. DIMENSION MEASURED HUB. INCLUDES FLANGE DISTORTION OUTER EDGE.
26.40 (1.039) 24.40 (.961)
30.40 (1.197) MAX.
Notes: VCC= (VCES), =15V, 28µH, This only applied TO-220AB package This applied D2Pak, when mounted square FR-4 G-10 Material
recommended footprint soldering techniques refer application note #AN-994.
Energy losses include "tail" diode reverse recovery, using Diode HF03D060ACE. TO-220 package recommended Surface Mount Application Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 10/02
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