IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR Standard: Optimi

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IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR Standard: Optimi

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91581A
IRG4PC50S
INSULATED GATE BIPOLAR TRANSISTOR
Standard: Optimized minimum saturation voltage operating frequencies 1kHz) Generation IGBT design provides tighter parameter distribution higher efficiency than Generation Industry standard TO-247AC package
Standard Speed IGBT
VCES 600V
VCE(on) typ. 1.28V
@VGE 15V,
n-channel
Benefits
Generation IGBT's offer highest efficiency available IGBT's optimized specified application conditions Designed "drop-in" replacement equivalent industry-standard Generation IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 screw.
Max.
(0.063 (1.6mm) from case
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.24 (0.21)
Max.
0.64
Units
°C/W (oz)
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2/7/2000
IRG4PC50S
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON) VGE(th) VGE(th)/TJ ICES
IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. Breakdown Voltage 0.75 1.28 Collector-to-Emitter Saturation Voltage 1.62 1.28 Gate Threshold Voltage Temperature Coeff. Threshold Voltage -9.3 Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Max. Units Conditions 250µA 1.0A V/°C 1.0mA 1.36 Fig.2, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 600V 10V, 25°C 1000 600V, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.72 8.27 8.99 1080 4100 Max. Units Conditions 400V Fig. 25°C 41A, 480V 15V, Energy losses include "tail" Fig. 150°C, 41A, 480V 15V, Energy losses include "tail" Fig. Measured from package Fig. 1.0MHz
Repetitive rating; 20V, pulse width limited
max. junction temperature. fig.
80%(VCES), 20V, 10µH, 5.0,
(See fig. 13a)
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited maximum
junction temperature.
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IRG4PC50S
125° 90°C drive ified
Load Current
Frequency (kHz)
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
1000
1000
Collector-to-Emitter Current
Collector-to-Emitter Current
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
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IRG4PC50S
Collector-to-Emitter Voltage(V)
axim ollector urrent
PULSE WIDTH
=20.5
perature (°C)
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC50S
8000
Gate-to-Emitter Voltage
Capacitance (pF)
6000
1MHz Cies SHORTED Cres Coes
400V
Cies
4000
2000
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
10.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V
480V
20.5
Gate Resistance Gate Resistance (Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Junction Temperature
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IRG4PC50S
Collector-to-Emitter Current
Total Switching Losses (mJ)
480V
1000
SAFE OPERATING AREA
1000
Collector-to-emitter Current
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
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IRG4PC50S
480V
480V C@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Driver same type D.U.T., 480V
Fig. Switching Loss
Test Circuit
Fig. Switching Loss
Waveforms
t=5µ
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IRG4PC50S
Case Outline Dimensions TO-247AC
LEAD 1234-
GATE COLLE COLLE
(.583 (.559
4.30 3.70
5.45
CONFORMS JEDEC OUTLINE TO-247AC (TO-3P)
illim
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN REGIONAL CENTRE: 439/445 Godstone Whyteleafe, Surrey OBL, Tel: (0)20 8645 8000 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 JAPAN: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Tel: (0)3 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: (0)838 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data specifications subject change without notice. 6/00
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IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR Standard: Optimi

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