IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-03

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IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-03

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IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY
Part Number IRFG5210 IRFG5210 RDS(on) 0.68A -0.68A CHANNEL
HEXFET® MOSFET technology International
Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconductance. HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling electrical parameter temperature stability. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, virtually application where high reliability required. HEXFET transistor's totally isolated package eliminates need additional isolating material between device heatsink. This improves thermal efficiency reduces drain capacitance.
MO-036AB
Features:
Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
10V, 25°C Continuous Drain Current 10V, 100°C Continuous Drain Current 25°C dv/dt Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page
Pre-Irradiation
N-Channel
0.68 2.72 0.011
P-Channel
-0.68 -0.4 -2.72 0.011
Units
W/°C
V/ns
(0.63 in./1.6 from case 10s) (Typical)
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04/17/02
IRFG5210
Electrical Characteristics Each N-Channel Device 25°C (Unless Otherwise Specified)
Parameter Units
0.27 1.83 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 10V, 0.4A 10V, 0.68A VGS, 0.25mA 15V, 0.4A VDS= 160V, VGS= 160V, =125°C -20V =10V, 0.68A, 100V 100V, 0.68A, =10V,
BVDSS Drain-to-Source Breakdown Voltage DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance 0.54 IDSS Zero Gate Voltage Drain Current IGSS IGSS td(on) td(off) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from drain lead (6mm/ 0.25in. from package) source lead (6mm/0.25in. from package)
Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1.0MHz
Source-Drain Diode Ratings Characteristics (Per Die)
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
0.63
Test Conditions
25°C, 0.68A, 25°C, 0.68A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance (Per Die)
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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IRFG5210
Electrical Characteristics Each P-Channel Device 25°C (Unless Otherwise Specified)
Parameter Units
-0.22 1.83 -4.0 -250 -100 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -10V, -0.4A -10V, 0.68A VGS, -0.25mA -15V, -0.4A VDS= -160V, VGS= -160V, =125°C -10V, -0.68A, -100V -100V, -0.68A, -10V,
BVDSS Drain-to-Source Breakdown Voltage -200 DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage -2.0 Forward Transconductance 0.64 IDSS Zero Gate Voltage Drain Current IGSS IGSS td(on) td(off) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from drain lead (6mm/ 0.25in. from package) source lead (6mm/0.25in. from package) -25V 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode Ratings Characteristics (Per Die)
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-0.61 -2.4 -4.8
Test Conditions
25°C, -0.68A, 25°C, -0.68A, di/dt -100A/µs -50V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance (Per Die)
Parameter
thJC RthJA Junction-to-Case Junction-to-Ambient
Units
°C/W
Test Conditions
Typical socket mount
footnotes refer last page
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IRFG5210 N-Channel Q1,Q3
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
0.68A
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature°
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFG5210 N-Channel Q1,Q3
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
0.68A
160V 100V
Capacitance (pF)
Ciss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
100us
Drain Current
Single Pulse
10ms
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFG5210 N-Channel Q1,Q3
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
0.50
Thermal Response thJA
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001
Notes: Duty factor Peak thJA 0.01
1000
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFG5210 N-Channel Q1,Q3
Single Pulse Avalanche Energy (mJ)
0.30A 0.43A BOTTOM 0.68A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRFG5210 P-Channel Q2,Q4
Drain-to-Source Current
-15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V
-4.5V
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
-0.68A
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
-VGS Gate-to-Source Voltage
Junction Temperature°
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFG5210 P-Channel Q2,Q4
-VGS Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
-0.68A
Capacitance (pF)
=-160V =-100V =-40V
Ciss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED
DS(on)
Drain Current
100us
Single Pulse
10ms
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFG5210 P-Channel Q2,Q4
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
0.50
Thermal Response thJA
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001
Notes: Duty factor Peak ZthJA 0.01 1000
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFG5210 P-Channel Q2,Q4
Single Pulse Avalanche Energy (mJ)
-20V
-0.30A -0.43A BOTTOM -0.68A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-10V
.2µF .3µF
-10V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRFG5210
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 50V, starting 25°C, 276mH, Peak 0.68A, 0.68A, di/dt 290A/µs, 200V, 150°C Pulse width Duty Cycle
Repetitive Rating; Pulse width limited
maximum junction temperature.
50V, starting 25°C, 475mH,
Peak 0.68A, -10V
0.68A, di/dt 290A/µs,
-200V, 150°C
Case Outline Dimensions MO-036AB
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 04/02
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IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-03

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