POWER MOSFET SURFACE MOUNT (SMD-1) IRFNG40 IRFNG40 1000V, N-

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POWER MOSFET SURFACE MOUNT (SMD-1) IRFNG40 IRFNG40 1000V, N-

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91555A
POWER MOSFET SURFACE MOUNT (SMD-1)
IRFNG40
IRFNG40 1000V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
DS(on)
3.9A
HEXFET® MOSFET technology International Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconductance. HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling electrical parameter temperature stability. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, virtually application where high reliability required. HEXFET transistor's totally isolated package eliminates need additional isolating material between device heatsink. This improves thermal efficiency reduces drain capacitance.
SMD-1
Features:
Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Surface mount Light-weight
Absolute Maximum Ratings
Parameter
10V, 25°C 10V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 15.6 12.5 300(for seconds) (Typical)
Units
W/°C
V/ns
footnotes refer last page
www.irf.com
2/11/02
IRFNG40
Electrical Characteristics
Parameter
25°C (Unless Otherwise Specified) Units
-100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 10V, 2.5A 10V, 3.9A VGS, 250µA 15V, 2.5A VDS= 800V ,VGS=0V 800V, 125°C -20V =10V, =3.9A 500V 500V, 3.9A, =10V,RG
BVDSS Drain-to-Source Breakdown Voltage 1000 DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS td(on) td(off) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source pad. 1.0MHz
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1700
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
15.6 1000
Test Conditions
25°C, 3.9A, 25°C, 3.9A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC Junction-to-Case
Units
°C/W
Test Conditions
footnotes refer last page
www.irf.com
IRFNG40
Typical Output Characteristics
Typical Output Characteristics
3.9A
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFNG40
=3.9A
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRFNG40
D.U.T.
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: Duty factor Peak thJC
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRFNG40
12a. Unclamped Inductive Test Circuit
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRFNG40
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 50V, starting 25°C, 69mH Peak 3.9A,
3.9A, di/dt 100A/µs,
1000V, 150°C
Pulse width Duty Cycle
Case Outline Dimensions SMD-1
ASSIGNMENTS DRAIN GATE SOURCE
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 02/02
www.irf.com

POWER MOSFET SURFACE MOUNT (SMD-1) IRFNG40 IRFNG40 1000V, N-

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