POWER MOSFET THRU-HOLE (TO-254AA) IRFMG50 IRFMG50 1000V, N-C

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POWER MOSFET THRU-HOLE (TO-254AA) IRFMG50 IRFMG50 1000V, N-C

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90711B
POWER MOSFET THRU-HOLE (TO-254AA)
IRFMG50
IRFMG50 1000V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
DS(on)
5.6A
HEXFET® MOSFET technology International
Rectifier's advanced line power MOSFET transistors. efficient geometry design achieves very on-state resistance combined with high transconductance. HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling electrical parameter temperature stability. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, virtually application where high reliability required. HEXFET transistor's totally isolated package eliminates need additional isolating material between device heatsink. This improves thermal efficiency reduces drain capacitance.
TO-254AA
Features:
Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
10V, 25°C 10V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page 300(0.063in./1.6mm from case sec) (Typical)
Units
W/°C
V/ns
www.irf.com
4/17/01
IRFMG50
Electrical Characteristics
Parameter
25°C (Unless Otherwise Specified) Units
-100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 10V, 3.5A
BVDSS Drain-to-Source Breakdown Voltage 1000 DSS/T Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS td(on) td(off) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
VGS, 250µA 15V, 3.5A VDS= 800V ,VGS=0V 800V, 125°C -20V =10V, =5.6A 400V 400V, 5.6A, 2.35
Measured from Drain lead (6mm /0.25in. from package) Source lead (6mm /0.25in. from package)
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-to-Case Capacitance
2400
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
1200
Test Conditions
25°C, 5.6A, 25°C, 5.6A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient
Units
0.83 0.21
°C/W
Test Conditions
Typical socket mount
footnotes refer last page
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IRFMG50
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRFMG50
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRFMG50
D.U.T.
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFMG50
12a. Unclamped Inductive Test Circuit
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRFMG50
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 50V, starting 25°C, 54mH Peak 5.6A,
5.6A, di/dt 120A/µs,
1000V, 150°C
Pulse width Duty Cycle
Case Outline Dimensions TO-254AA
3.84 3.59
COLL
3.81
3.81
LEGEND DRAIN SOURCE GATE IRHM57163SED IRHM57163SEU
CAUTION BERYLLIA WARNING MIL-PRF-19500 Packages containing beryllia shall ground, sandblasted, machined have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 04/01
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POWER MOSFET THRU-HOLE (TO-254AA) IRFMG50 IRFMG50 1000V, N-C

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