IRF7509 HEXFET® Power MOSFET Generation Technology Ultra On-
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91270J
IRF7509
HEXFET® Power MOSFET
Generation Technology Ultra On-Resistance Dual Channel MOSFET Very Small SOIC Package Profile (<1.1mm) Available Tape Reel Fast Switching
HANNE
N-Ch
P-Ch
VDSS
-30V
HANNE
RDS(on) 0.11 0.20
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. Micro8 package, with half footprint area standard SO-8, provides smallest footprint available SOIC outline. This makes Micro8 ideal device applications where printed circuit board space premium. profile (<1.1mm) Micro8 will allow easily into extremely thin application environments such portable electronics PCMCIA cards.
icro
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C VGSM dv/dt TSTG Drain-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt Junction Storage Temperature Range Soldering Temperature, seconds N-Channel
Max.
P-Channel -2.0 -1.6
Units
mW/°C V/ns
1.25 (1.6mm from case)
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
Units
°C/W
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12/1/98
IRF7509
Electrical Characteristics 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. -1.0 0.92 Typ. Max. 0.059 -0.039 0.09 0.110 0.14 0.175 0.17 0.20 0.30 0.40 -1.0 ±100 Units V/°C Conditions 250µA -250µA Reference 25°C, Reference 25°C, -1mA 10V, 1.7A 4.5V, 0.85A -10V, =-1.2A -4.5V, =-0.6A VGS, 250µA VGS, -250µA 10V, 0.85A -10V, -0.6A -24V, 125°C -24V, 125°C N-Channel 1.7A, 24V, P-Channel -1.2A, -24V, -10V N-Channel 15V, 1.7A, 6.1, P-Channel -15V, -1.2A, 6.2, N-Channel 25V, 1.0MHz P-Channel -25V, 1.0MHz
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
td(on) td(off)
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 1.25 -1.25 25°C, 1.7A, -1.2 25°C, -1.8A, N-Channel 25°C, 1.7A, di/dt 100A/µs P-Channel 25°C, -1.2A, di/dt -100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 10sec.
N-Channel 1.7A, di/dt 120A/µs, V(BR)DSS, 150°C
P-Channel -1.2A, di/dt 160A/µs, V(BR)DSS, 150°C
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Channel
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
IRF7509
Drain-to-S ource urrent
rain-to-S rrent
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
3.0V
25°C
150°C
rain-to-Sourc Voltage
rain-to-Source oltage
Typical Output Characteristics
Typical Output Characteristics
rain-to-S urrent
evers rain urrent
150°C 25°C
ource-to-D rain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
0.220
S(on) Drain-to-S ource Resistance alized)
1.7A
(on) Drain-to-Source Resistance
0.180
4.5V
0.140
0.100
0.060
tion rature
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
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IRF7509
Channel
0.140
(on), Drain-to-Source Resistance
OPERATION THIS AREA LIMITED RDS(on)
0.120
Drain Current
10us
2.7A
0.100
100us
0.080
10ms
0.060
Single Pulse
Gate-to-Source Voltage
Drain-to-Source Voltage
Typical On-Resistance Gate Voltage
Maximum Safe Operating Area
ate-to-S ourc oltage
1.7A
rain-to-S ourc oltage
Total harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
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IRF7509
Channel
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
rain-to-S ourc urren
rain-to-S ourc urrent
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
-3.0V
-3.0
20µs 150°C
rain-to-S ourc oltage
rain-to-S ource Voltage
Typical Output Characteristics
Typical Output Characteristics
rain-to urce urre
everse rain urrent
150°C 25°C
olta
Sourc e-to-D rain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
(on) rain-to-S ourc esistance alized)
RDS(on) Drain-to-Source Resistance
-1.2A
-4.5V
-10V
-10V
tion perature
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
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IRF7509
Channel
RDS(on) Drain-to-Source Resistance
0.60
OPERATION THIS AREA LIMITED RDS(on)
0.50
Drain Current
10us
0.40
-2.0A
100us
0.30
0.20
10ms
0.10
Single Pulse
Gate-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical On-Resistance Gate Voltage
Maximum Safe Operating Area
te-to
itanc
rain-to-S ourc oltage
Total harge
Typical Capacitance Drain-to-Source Voltage
Channel
1000
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7509
Package Outline
Micro8 Outline Dimensions shown millimeters (inches)
0.25 (.010)
ILLIM
.005 .116
0.18 3.05
.188 .026
5.03
0.08 (.003) 0.10 (.004)
1.04 .041 0.38 .015
3.20 .126
4.24 5.28 .167 .208
0.65 .0256
Part Marking Information
Micro8
7501
7501
PART NUMBER
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IRF7509
Tape Reel Information
Micro8 Dimensions shown millimeters (inches)
0.00
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 12/98
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