IRF7507 HEXFET® Power MOSFET Generation Technology Ultra On-
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91269I
IRF7507
HEXFET® Power MOSFET
Generation Technology Ultra On-Resistance Dual Channel MOSFET Very Small SOIC Package Profile (<1.1mm) Available Tape Reel Fast Switching
HANNE
N-Ch
P-Ch
VDSS
-20V
HANNE
RDS(on) 0.135 0.27
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. Micro8 package, with half footprint area standard SO-8, provides smallest footprint available SOIC outline. This makes Micro8 ideal device applications where printed circuit board space premium. profile (<1.1mm) Micro8 will allow easily into extremely thin application environments such portable electronics PCMCIA cards.
icro
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C VGSM dv/dt TSTG Drain-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt Junction Storage Temperature Range Soldering Temperature, seconds N-Channel 1.25 -5.0 (1.6mm from case)
Max.
P-Channel -1.7 -1.4
Units
mW/°C V/ns
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
Units
°C/W
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12/1/98
IRF7507
Electrical Characteristics 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. Units Conditions N-Ch 250µA P-Ch -250µA N-Ch 0.041 Reference 25°C, V/°C P-Ch -0.012 Reference 25°C, -1mA 0.085 0.14 4.5V, 1.7A N-Ch 0.120 0.20 2.7V, 0.85A 0.17 0.27 -4.5V, =-1.2A P-Ch 0.28 0.40 -2.7V, =-0.6A N-Ch VGS, 250µA P-Ch -0.7 VGS, -250µA N-Ch 10V, 0.85A P-Ch -10V, -0.6A N-Ch P-Ch -1.0 -16V, N-Ch 125°C P-Ch -16V, 125°C ±100 N-Ch N-Channel P-Ch 1.7A, 16V, 4.5V N-Ch 0.84 P-Ch 0.96 P-Channel N-Ch -1.2A, -16V, -4.5V P-Ch N-Ch N-Channel P-Ch 10V, 1.7A, 6.0, N-Ch P-Ch N-Ch P-Channel P-Ch -10V, -1.2A, 6.0, N-Ch P-Ch N-Ch N-Channel P-Ch 15V, 1.0MHz N-Ch P-Ch P-Channel N-Ch -15V, 1.0MHz P-Ch
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage Forward Transconductance
IGSS td(on) td(off)
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 1.25 -1.25 25°C, 1.7A, -1.2 25°C, -1.2A, N-Channel 25°C, 1.7A, di/dt 100A/µs P-Channel 25°C, -1.2A, di/dt -100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 10sec.
N-Channel 1.7A, di/dt 66A/µs, V(BR)DSS, 150°C
P-Channel -1.2A, di/dt 100A/µs, V(BR)DSS, 150°C
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Channel
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
IRF7507
rain-to-S ourc urrent
rain-to-S ource urrent
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
1.5V
0.01
1.5V 25°C
0.01
150°C
rain-to-S ourc oltage
rain-to-S ource Voltage
Typical Output Characteristics
Typical Output Characteristics
rain-to-S ource urrent
everse rain urrent
150°C
25°C
Sourc e-to-D rain oltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
S(on) Drain-to-Source Resistance alized)
RDS(on) Drain-to-Source Resistance
1.7A
2.5V
5.0V
Junction perature
urren
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
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IRF7507
Channel
0.13
OPERATION THIS AREA LIMITED RDS(on)
0.11
10us
Drain Current
100us
0.09
10ms
0.07
0.05
Single Pulse
ate-to-S ource oltage
Drain-to-Source Voltage
Typical On-Resistance Gate Voltage
Maximum Safe Operating Area
ate-to-S ourc oltage
1.7A
rain-to-S ource oltage
Total harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
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IRF7507
Channel
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
rain-to-S ourc urrent
rain-to-S ourc urrent
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
-1.5V
-1.5V
0.01
20µs 25°C
0.01
150°C
rain-to-S ource Voltage
rain-to-Source oltage
Typical Output Characteristics
Typical Output Characteristics
rain-to-S ource urrent
everse rain urrent
0.01
0.01
ourc e-to-D rain oltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
rain-to-S ource esistance alized)
-1.2A
(on), Drain-to-Source Resistance
-2.5V
-5.0V
-4.5V
Junction perature
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
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IRF7507
Channel
0.300
(on) Drain-to-Source Resistance
OPERATION THIS AREA LIMITED RDS(on)
0.250
Drain Current
100us
-1.7A
0.200
10ms
0.150
0.100
Single Pulse
-VGS Gate-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical On-Resistance Gate Voltage
Maximum Safe Operating Area
ate-to-S ource oltage
1MHz
-1.2A -16V
itan
rain-to-S ource oltage
Total arge
Typical Capacitance Drain-to-Source Voltage
Channel
1000
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7507
Package Outline
Micro8 Outline Dimensions shown millimeters (inches)
0.25 (.010)
ILLIM
.005 .116
0.18 3.05
.188 .026
5.03
0.08 (.003) 0.10 (.004)
1.04 .041 0.38 .015
3.20 .126
4.24 5.28 .167 .208
0.65 .0256
Part Marking Information
Micro8
7501
7501
PART NUMBER
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IRF7507
Tape Reel Information
Micro8 Dimensions shown millimeters (inches)
0.00
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 12/98
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