IRF7105 HEXFET® Power MOSFET Advanced Process Technology Ult

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IRF7105 HEXFET® Power MOSFET Advanced Process Technology Ult

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91097E
IRF7105
HEXFET® Power MOSFET
Advanced Process Technology Ultra On-Resistance Dual Channel Mosfet Surface Mount Available Tape Reel Dynamic dv/dt Rating Fast Switching Description
N-CHANNEL MOSFET
N-Ch
VDSS RDS(on) 0.10 3.5A
P-Ch
-25V 0.25 -2.3A
P-CHANNEL MOSFET
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve lowest possible on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques. Power dissipation greater than 0.8W possible typical mount application.
SO-8
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
N-Channel 0.016 -3.0 P-Channel -2.3 -1.8
Units
W/°C V/nS
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
62.5
Units
°C/W
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07/18/03
IRF7105
Electrical Characteristics 25°C (unless otherwise specified)
Parameter (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. -1.0 Typ. Max. 0.030 -0.015 0.083 0.10 0.14 0.16 0.16 0.25 0.30 0.40 -3.0 -2.0 ±100 Units V/°C Conditions 250µA -250µA Reference 25°C, Reference 25°C, -1mA 10V, 1.0A 4.5V, 0.50A -10V, -1.0A -4.5V, -0.50A VGS, 250µA VGS, -250µA 15V, 3.5A -15V, -3.5A 20V, -20V, 20V, 55°C -20V, 55°C N-Channel 2.3A, 12.5V,
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) GS(th) td(on) td(off) Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total GateCharge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
P-Channel -2.3A, -12.5V, -10V N-Channel 25V, 1.0A, 6.0, P-Channel -25V, -1.0A, 6.0, Between lead (0.25in.)from package center contact N-Channel 15V, 1.0MHz P-Channel -15V, 1.0MHz
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -2.0 -9.2 25°C, 1.3A, -1.2 25°C, -1.3A, N-Channel 25°C, 1.3A, di/dt 100A/µs P-Channel 25°C, -1.3A, di/dt 100A/µs Intrinsic turn-on time neglegible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature.
Notes:
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 10sec.
N-Channel 3.5A, di/dt 90A/µs, V(BR)DSS, 150°C
P-Channel -2.3A, di/dt 90A/µs, V(BR)DSS, 150°C
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N-Channel
Drain-to-Source Current
IRF7105
Drain-to-Source Current
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Drain-to-Source Current
Typical Output Characteristics
(on) Drain-to-Source Resistance
Gate-to-Source Voltage
Normalized)
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
Gate-to-Source Voltage
Capacitance
Drain-to-Source Voltage
Total Gate Charge
Typical Capacitance Drain-to-Source Voltage www.irf.com
Typical Gate Charge Gate-to-Source Voltage
IRF7105
Reverse Drain Current
N-Channel
Drain Current
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
Drain Current
Pulse Width Duty Factor
D.U.T.
10a. Switching Time Test Circuit
Ambient Temperature
Maximum Drain Current Ambient Temperature
Current Regulator Same Type D.U.T.
td(on) d(off)
.2µF .3µF
10b. Switching Time Waveforms
D.U.T.
Charge
Current Sampling Resistors
11a. Gate Charge Test Circuit
11b. Basic Gate Charge Waveform www.irf.com
P-Channel
IRF7105
Drain-to-Source Current
Drain-to-Source Current
-VDS Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Drain-to-Source Current
Typical Output Characteristics
(on) Drain-to-Source Resistance
Gate-to-Source Voltage
Normalized)
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
Gate-to-Source Voltage
Capacitance
-VDS Drain-to-Source Voltage
Total Gate Charge
Typical Capacitance Drain-to-Source Voltage www.irf.com
Typical Gate Charge Gate-to-Source Voltage
IRF7105
-ISD Reverse Drain Current
P-Channel
Drain Current
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Drain Current
Maximum Safe Operating Area
-10V
Pulse Width Duty Factor
D.U.T.
21a. Switching Time Test Circuit
Ambient Temperature
Maximum Drain Current Ambient Temperature
Current Regulator Same Type D.U.T.
td(on) d(off)
.2µF .3µF
21b. Switching Time Waveforms
D.U.T.
-10V
-3mA
Charge
Current Sampling Resistors
22a. Gate Charge Test Circuit
22b. Basic Gate Charge Waveform www.irf.com
P-Channel
IRF7105
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.001 0.01
0.0001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7105
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
VGS*
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity P-Channel P-Channel Driver P-Channel Measurements
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD
5.0V Logic Level Drive Devices Channel HEXFETS www.irf.com
IRF7105
SO-8 Package Details
Dimensions shown millimeters (inches)
INCHES .0532 .0040 .014 .0075 .189 .150 .0688 .0098 .018 .0098 .196 .157
MILLIMETERS 1.35 0.10 0.36 0.19 4.80 3.81 1.75 0.25 0.46 0.25 4.98 3.99
0.25 (.010)
0.10 (.004)
.050 BASIC .025 BASIC .2284 .011 0.16 .2440 .019 .050
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 6.20 0.48 1.27
0.25 (.010) NOTES:
RECOMMENDED FOOTPRINT 0.72 (.028
DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS SHOWN MILLIMETERS (INCHES). OUTLINE CONFORMS JEDEC OUTLINE MS-012AA.
DIMENSION DOES INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS EXCEED 0.25 (.006). DIMENSIONS LENGTH LEAD SOLDERING SUBSTRATE.
6.46 .255
1.78 (.070)
1.27 .050
SO-8 Part Marking
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IRF7105
SO-8 Tape Reel
Dimensions shown millimeters (inches)
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.07/03
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IRF7105 HEXFET® Power MOSFET Advanced Process Technology Ult

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