CHANNEL 900V 1.05 TO-247/ISOWATT218 FAST POWER MOSFET TYPE 7NA90
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STW7NA90 STH7NA90FI
CHANNEL 900V 1.05 TO-247/ISOWATT218 FAST POWER MOSFET
TYPE 7NA90 STH7NA90F
DS(on)
TYPICAL RDS(on) 1.05 GATE SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) CONSUMER INDUSTRIAL LIGHTING DC-AC CONVERTER WELDING EQUIPMENT UNINTERRUPTABLE POWER SUPPLY (UPS)
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Insulation ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
Value W7NA90 STH7NA90F 1.52 0.56 4000
Pulse width limited safe operating area
October 1998
STW7NA90 STH7NA90FI
THERMAL DATA
TO-247 -case -amb thc-sink Thermal Resistance Junction-case 0.65 ISOWATT 1.78
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. 2.25 Typ. 1.05 Max. 3.75 Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. 3100 4000 Max. Unit
STW7NA90 STH7NA90FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Time Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions (see test circuit, figure Min. Typ. Max. Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 13.8 di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area TO-247
Safe Operating Area ISOWATT218
STW7NA90 STH7NA90FI
Thermal Impedance TO-247 Thermal Impedance ISOWATT218
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STW7NA90 STH7NA90FI
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STW7NA90 STH7NA90FI
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW7NA90 STH7NA90FI
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW7NA90 STH7NA90FI
ISOWATT218 MECHANICAL DATA
DIM. MIN. 5.35 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 TYP. MAX. 5.65 2.08 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
P025C
STW7NA90 STH7NA90FI
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