IRF9956 Generation Technology Ultra On-Resistance Dual N-Channel

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IRF9956 Generation Technology Ultra On-Resistance Dual N-Channel

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IRF9956
Generation Technology Ultra On-Resistance Dual N-Channel MOSFET Surface Mount Very Gate Charge Switching Losses Fully Avalanche Rated
HEXFET® Power MOSFET
VDSS RDS(on) 0.10
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Recommended upgrade: IRF7303 IRF7313 Lower profile/smaller equivalent: IRF7503
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques.
Description
SO-8
Absolute Maximum Ratings 25°C Unless Otherwise Noted)
Symbol
dv/dt TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 25°C 70°C
Maximum
Units
Pulsed Drain Current Continuous Source Current (Diode Conduction) 25°C Maximum Power Dissipation 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range
0.20
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Symbol
Limit
62.5
Units
°C/W 04/29/03
IRF9956
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.015 0.06 0.09
Max. Units Conditions 250µA V/°C Reference 25°C, 0.10 10V, 2.2A 0.20 4.5V, 1.0A 250µA 15V, 3.5A 24V, 24V, 125°C -100 -24V 1.8A 10V, Fig. 1.0A 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 0.82
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 1.25A, 25°C, 1.25A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited Starting 25°C, 22mH
2.0A.
max. junction temperature. fig.
2.0A, di/dt 100A/µs, V(BR)DSS,
150°C
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 10sec.
IRF9956
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V 20µs PULSE WIDTH 25°C
3.0V 20µs PULSE WIDTH 150°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
Reverse Drain Current
25°C 150°C
150°C 25°C
20µs PULSE WIDTH
Gate-to-Source Voltage
Source-to-Drain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
IRF9956
DS(on) Drain-to-Source Resistance (Normalized)
2.2A
(on) Drain-to-Source Resistance
0.12
0.10
4.5V
0.08
0.06
0.04
Junction Temperature
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
(on) Drain-to-Source Resistance
Single Pulse Avalanche Energy (mJ)
0.16
0.14
BOTTOM
0.89A 1.6A 2.0A
0.12
0.10
0.08
3.5A
0.06
0.04
0.02
0.00
Gate-to-Source Voltage
Starting Junction Temperature (°C)
Typical On-Resistance Gate Voltage
Maximum Avalanche Energy Drain Current
IRF9956
Gate-to-Source Voltage
1MHz SHORTED
1.8A
Capacitance (pF)
Ciss Coss
Crss
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF9956
Package Outline
Outline
INCHES .0532 .0040 .014 .0075 .189 .150 .0688 .0098 .018 .0098 .196 .157
MILLIMETERS 1.35 0.10 0.36 0.19 4.80 3.81 1.75 0.25 0.46 0.25 4.98 3.99
0.25 (.010)
0.10 (.004)
.050 BASIC .025 BASIC .2284 .011 0.16 .2440 .019 .050
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 6.20 0.48 1.27
0.25 (.010) NOTES:
RECOMMENDED FOOTPRINT 0.72 (.028
DIMENSIONING TOLERANCING ANSI Y14.5M-1982. CONTROLLING DIMENSION INCH. DIMENSIONS SHOWN MILLIMETERS (INCHES). OUTLINE CONFORMS JEDEC OUTLINE MS-012AA. DIMENSION DOES INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS EXCEED 0.25 (.006). DIMENSIONS LENGTH LEAD SOLDERING SUBSTRATE.
6.46 .255
1.78 (.070)
1.27 .050
Part Marking Information
EXAMPLE THIS IRF7101 DATE CODE (YWW) LAST DIGIT YEAR WEEK XXXX WAFER CODE (LAST DIGITS)
INTERNATIONAL RECTIFIER LOGO F7101
PART NUMBER
BOTTOM
IRF9956
Tape Reel Information
Dimensions shown millimeters (inches)
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/03

IRF9956 Generation Technology Ultra On-Resistance Dual N-Channel

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