IRF7501 HEXFET® Power MOSFET Generation Technology Ulrtra On

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IRF7501 HEXFET® Power MOSFET Generation Technology Ulrtra On

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91265H PRELIMINARY
IRF7501
HEXFET® Power MOSFET
Generation Technology Ulrtra On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Profile (<1.1mm) Available Tape Reel Fast Switching
VDSS =20V
RDS(on) 0.135
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. Micro8 package, with half footprint area standard SO-8, provides smallest footprint available SOIC outline. This makes Micro8 ideal device applications where printed circuit board space premium. profile (<1.1mm) Micro8 will allow easily into extremely thin application environments such portable electronics PCMCIA cards.
icro
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C VGSM dv/dt TSTG Drain-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse tp<10µs Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
1.25 0.01 (1.6mm from case)
Units
W/°C V/ns
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
Units
°C/W
Micro8 Data Sheets reflect improved Thermal Resistance, Power Current -Handling Ratings- effective only product marked with Date Code later
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4/30/98
IRF7501
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 0.70 Typ. Max. Units Conditions 250µA 0.041 V/°C Reference 25°C, 0.085 0.135 4.5V, 1.7A 0.120 0.20 2.7V, 0.85A VGS, 250µA 10V, 0.85A 16V, 16V, 125°C -100 -12V 1.7A 0.84 4.5V, Fig. 1.7A 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units 1.25
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 1.7A, 25°C, 1.7A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 10sec
1.7A, di/dt 66A/µs, V(BR)DSS,
150°C
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IRF7501
rain-to-S ource urrent
rain-to-S ource urrent
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
1.5V
0.01
1.5V 25°C
0.01
150°C
rain-to-Source oltage
rain-to-S ource oltage
Typical Output Characteristics
Typical Output Characteristics
-to-S urren
everse rain urrent
150°C
25°C
ource-to-D rain oltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
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IRF7501
rain-to ource esistance alized)
RDS(on), Drain-to-Source Resistance
1.7A
Junction perature
rain urrent
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
in-to esistan
0.13
0.11
0.09
0.07
0.05
-to-S olta
Typical On-Resistance Gate Voltage
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IRF7501
ate-to ource oltage
1.7A
apacitanc
rain-to ource oltage
Total harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7501 Micro8 Package Outline
4.24
NOTES:
Part Marking Information
IRF7501 example
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IRF7501 Tape Reel
Dimensions shown millimeters (inches)
NOTES:
MAX.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 4/98
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IRF7501 HEXFET® Power MOSFET Generation Technology Ulrtra On

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